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參數(shù)資料
| 型號(hào)： | M28R400CTB90ZB1T |
| 廠(chǎng)商： | 意法半導(dǎo)體 |
| 英文描述： | 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory |
| 中文描述： | 4兆位（256Kb的x16插槽，引導(dǎo)塊）1.8V電源快閃記憶體 |
| 文件頁(yè)數(shù)： | 30/50頁(yè) |
| 文件大小： | 755K |
| 代理商： | M28R400CTB90ZB1T |
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Table 28. Primary Algorithm-Specific Extended Query Table
Note: 1. See Table 25, offset 15 for P pointer definition.
Offset
P = 35h (1)
Data
Description
Value
(P+0)h = 35h
0050h
Primary Algorithm extended Query table unique ASCII string “PRI”
"P"
(P+1)h = 36h
0052h
"R"
(P+2)h = 37h
0049h
"I"
(P+3)h = 38h
0031h
Major version number, ASCII
"1"
(P+4)h = 39h
0030h
Minor version number, ASCII
"0"
(P+5)h = 3Ah
0067h
Extended Query table contents for Primary Algorithm. Address (P+5)h
contains less significant byte.
bit 0
Chip Erase supported
(1 = Yes, 0 = No)
bit 1
Suspend Erase supported
(1 = Yes, 0 = No)
bit 2
Suspend Program supported
(1 = Yes, 0 = No)
bit 3
Legacy Lock/Unlock supported
(1 = Yes, 0 = No)
bit 4
Queued Erase supported
(1 = Yes, 0 = No)
bit 5
Instant individual block locking supported (1 = Yes, 0 = No)
bit 6
Protection bits supported
(1 = Yes, 0 = No)
bit 7
Page mode read supported
(1 = Yes, 0 = No)
bit 8
Synchronous read supported
(1 = Yes, 0 = No)
bit 31 to 9
Reserved; undefined bits are ‘0’
Yes
No
Yes
No
(P+6)h = 3Bh
0000h
(P+7)h = 3Ch
0000h
(P+8)h = 3Dh
0000h
(P+9)h = 3Eh
0001h
Supported Functions after Suspend
Read Array, Read Status Register and CFI Query are always supported
during Erase or Program operation
bit 0
Program supported after Erase Suspend (1 = Yes, 0 = No)
bit 7 to 1
Reserved; undefined bits are ‘0’
Yes
(P+A)h = 3Fh
0003h
Block Lock Status
Defines which bits in the Block Status Register section of the Query are
implemented.
Address (P+A)h contains less significant byte
bit 0
Block Lock Status Register Lock/Unlock bit active (1 = Yes, 0 = No)
bit 1
Block Lock Status Register Lock-Down bit active (1 = Yes, 0 = No)
bit 15 to 2
Reserved for future use; undefined bits are ‘0’
Yes
(P+B)h = 40h
0000h
(P+C)h = 41h
0022h
VDD Logic Supply Optimum Program/Erase voltage (highest performance)
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
2.2V
(P+D)h = 42h
00C0h
VPP Supply Optimum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
12V
(P+E)h = 43h
0001h
Number of Protection register fields in JEDEC ID space.
"00h," indicates that 256 protection bytes are available
01
(P+F)h = 44h
0080h
Protection Field 1: Protection Description
This field describes user-available. One Time Programmable (OTP)
Protection register bytes. Some are pre-programmed with device unique
serial numbers. Others are user programmable. Bits 0–15 point to the
Protection register Lock byte, the section’s first byte.
The following bytes are factory pre-programmed and user-programmable.
bit 0 to 7
Lock/bytes JEDEC-plane physical low address
bit 8 to 15
Lock/bytes JEDEC-plane physical high address
bit 16 to 23
"n" such that 2n = factory pre-programmed bytes
bit 24 to 31
"n" such that 2n = user programmable bytes
80h
(P+10)h = 45h
0000h
00h
(P+11)h = 46h
0003h
8 Byte
(P+12)h = 47h
0003h
8 Byte
(P+13)h = 48h
Reserved
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M28R400CTB90ZB6T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory |
| M28R400CT-KGD | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:Known Good Die 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory |
| M28R400CTT120ZB1T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory |
| M28R400CTT120ZB6T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory |
| M28R400CTT90ZB1T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory |
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