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參數(shù)資料
| 型號(hào)： | M28F256 |
| 廠(chǎng)商： | 意法半導(dǎo)體 |
| 英文描述： | 256 Kbit (32Kb x8, Bulk) Flash Memory(256K位閃速存儲(chǔ)器) |
| 中文描述： | 256千位（32KB的× 8，散裝）閃存（256K位閃速存儲(chǔ)器） |
| 文件頁(yè)數(shù)： | 1/20頁(yè) |
| 文件大?。?/td> | 146K |
| 代理商： | M28F256 |
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M28F256
256 Kbit (32Kb x8, Bulk) Flash Memory
August 1998
1/20
AI00688B
15
A0-A14
W
DQ0-DQ7
VPP
VCC
M28F256
G
E
VSS
8
Figure 1. LogicDiagram
5V
±
10% SUPPLYVOLTAGE
12V PROGRAMMING VOLTAGE
FASTACCESS TIME: 90ns
BYTE PROGRAMMING TIME: 10
μ
s typical
ELECTRICALCHIPERASE IN 1s RANGE
LOW POWER CONSUMPTION
– StandbyCurrent: 5
μ
A typical
10,000 ERASE/PROGRAMCYCLES
INTEGRATEDERASE/PROGRAMSTOP
TIMER
20 YEARSDATARETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– ManufacturerCode: 20h
– DeviceCode: A8h
DESCRIPTION
The M28F256 Flash memory is a non-volatile
memorythat maybe erasedelectricallyat the chip
level and programmed by byte. It is organised as
32 Kbytes of 8 bits. It uses a command register
architecturetoselecttheoperatingmodesandthus
provides a simple microprocessor interface. The
device is offered in PDIP32 and PLCC32 pack-
ages.
A0-A14
Address Inputs
DQ0-DQ7
Data Inputs / Outputs
E
Chip Enable
G
Output Enable
W
Write Enable
V
PP
Program Supply
V
CC
Supply Voltage
V
SS
Ground
Table1. SignalNames
PLCC32 (C)
32
1
PDIP32 (B)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M28F256-10B1TR | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory |
| M28F256-10B3TR | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory |
| M28F256-10B6TR | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory |
| M28F256-10C1TR | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory |
| M28F256-10C3TR | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory |
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