參數(shù)資料
型號(hào): M28F420
廠商: 意法半導(dǎo)體
英文描述: 4Mbit (512Kb x8 or 256Kb x16, Boot Block) Flash Memory(4Mb閃速存儲(chǔ)器)
中文描述: 的4Mb(512KB的x8或256Kb的x16插槽,引導(dǎo)塊)快閃記憶體(4Mb的閃速存儲(chǔ)器)
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 18K
代理商: M28F420
M28F420
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Flash Memory
5V
±
10% SUPPLYVOLTAGE
12V
±
5% or
±
10% PROGRAMMING
VOLTAGE
FASTACCESS TIME: 60ns
PROGRAM/ERASECONTROLLER (P/E.C.)
AUTOMATICSTATIC MODE
MEMORYERASE in BLOCKS
– BootBlock (Bottom location) with hardware
write and erase protection
– Parameterand Main Blocks
100,000 PROGRAM/ERASECYCLES
LOW POWER CONSUMPTION
20 YEARSDATARETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– ManufacturerCode: 0020h
– Device Code: 00FAh
DESCRIPTION
The M28F420 Flash memory is a non-volatile
memorythatmaybeerasedelectricallyat theblock
level and programmedby byteor by word.
B28F420/808
Completedata availableon
DATA-on-DISCCD-ROM
orat
www.st.com
1/2
A0-A16
Address Inputs
DQ0-DQ7
Data Input / Outputs
DQ8-DQ14
Data Input / Outputs
DQ15A–1
Data Input/Output or Address Input
E
Chip Enable
G
Output Enable
W
Write Enable
BYTE
Byte/Word Organization
WP
Write Protect
RP
Reset/Power Down/Boot Block
Unlock
V
PP
Program & Erase Supply Voltage
V
CC
Supply Voltage
V
SS
Ground
Signal Names
AI01130E
18
A0-A17
W
DQ0-DQ14
VPP
VCC
M28F420
G
E
VSS
15
RP
BYTE
DQ15A–1
WP
Figure 1. LogicDiagram
44
1
SO44 (M)
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