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參數(shù)資料
| 型號： | M28F201-90N6R |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 8-Input Positive-NAND Gates 14-SO 0 to 70 |
| 中文描述： | 2 MB的256K × 8，芯片擦除閃存 |
| 文件頁數(shù)： | 21/21頁 |
| 文件大?。?/td> | 179K |
| 代理商： | M28F201-90N6R |
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringementof patents or other rights ofthird parties which may result from its use. No
license is granted by implication or otherwise under anypatent or patent rights ofSGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are notauthorized foruseas critical components inlife supportdevices or systemswithout express
written approval of SGS-THOMSON Microelectronics.
1997 SGS-THOMSON Microelectronics - All Rights Reserved
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21/21
M28F201
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M28F201-90N6TR | 8-Input Positive-NAND Gates 14-SO 0 to 70 |
| M28F201-90XK1TR | 8-Input Positive-NAND Gates 14-SO 0 to 70 |
| M28F201-90XK6TR | 2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| M28F201-90XN1TR | 2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| M28F201-90XN3TR | 2 Mb 256K x 8, Chip Erase FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M28F201-90N6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| M28F201-90XK1R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| M28F201-90XK1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| M28F201-90XK3R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| M28F201-90XK3TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY |
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