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參數(shù)資料
| 型號(hào)： | M28C16-120N1T |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類(lèi)： | EEPROM |
| 英文描述： | 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION |
| 中文描述： | 16K的2K × 8的并行EEPROM，帶有軟件數(shù)據(jù)保護(hù) |
| 文件頁(yè)數(shù)： | 3/18頁(yè) |
| 文件大?。?/td> | 129K |
| 代理商： | M28C16-120N1T |
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Symbol
Parameter
Value
Unit
T
A
Ambient Operating Temperature
– 40 to 125
°
C
T
STG
Storage Temperature Range
– 65 to 150
°
C
V
CC
Supply Voltage
–0.3 to 6.5
V
V
IO
Input/Output Voltage
– 0.3 to V
CC
+0.6
V
V
I
Input Voltage
–0.3 to 6.5
V
V
ESD
Electrostatic Discharge Voltage (Human Body model)
(2)
4000
V
Notes:
1. Except for the rating ”O(jiān)perating Temperature Range”, stresses above those listed in the Table ”Absolute MaximumRatings” may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure toAbsolute Maximum Rating
conditions for extended periods may affect devicereliability. Refer also to the SGS-THOMSON SURE Program and other
relevant quality documents.
2. 100pF through 1500
; MIL-STD-883C, 3015.7
Table 2. Absolute Maximum Ratings
(1)
PIN DESCRIPTION
Addresses (A0-A10).
The address inputs select
an 8-bit memory location during a read or write
operation.
Chip Enable (E).
The chip enable input must be
low to enableall read/writeoperations.When Chip
Enableis high,power consumptionis reduced.
Output Enable (G).
The Output Enable input con-
trols the data output buffersand is used to initiate
read operations.
DataIn/Out(DQ0- DQ7).
Dataiswrittentoorread
from the M28C16through the I/O pins.
Write Enable(W).
TheWrite Enableinput controls
the writingof data to the M28C16.
Ready/Busy (RB).
Ready/Busy is an open drain
output that can be used to detect the end of the
internal write cycle.
It is offered only with theTSOP28 package. The
readershouldrefertotheM28C17datasheetfor
more information about the Ready/Busy func-
tion.
OPERATION
In orderto prevent datacorruption andinadvertent
write operationsan internal V
CC
comparatorinhib-
its Write operation if V
CC
is below V
WI
(see Table
7). Accessto the memory in write mode is allowed
after a power-upas specifiedin Table7.
Read
The M28C16is accessed like a staticRAM. When
E and G are low with W high, the data addressed
is presentedon the I/O pins. The I/Opins are high
impedance when either G or E is high.
Write
Write operations are initiated when both W and E
are low and G is high.The M28C16 supports both
E and W controlled write cycles. The Address is
latched by the falling edge of E or W which ever
occurs last and the Data on the rising edgeof E or
W which ever occurs first. Once initiated the write
operationis internallytimed until completion.
Mode
E
G
W
DQ0 - DQ7
Standby
1
X
X
Hi-Z
Output Disable
X
1
X
Hi-Z
Write Disable
X
X
1
Hi-Z
Read
0
0
1
Data Out
Write
0
1
0
Data In
Chip Erase
0
V
0
Hi-Z
Note:
1. 0 = V
IL
; 1 = V
IH
; X =V
IL
or V
IH;
V = 12
±
5%.
Table 3. OperatingModes
(1)
3/18
M28C16
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|---|---|
| M28C16-120N6T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION |
| M28C16-120P1T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION |
| M28C16-120P6T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION |
| M28C16-120WK1TR | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection |
| M28C16-120WK6TR | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection |
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