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參數(shù)資料
| 型號： | M27W401-80XK6TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 4 Mbit 512Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| 中文描述： | 4兆位512KB的× 8低壓紫外線可擦寫可編程只讀存儲器和OTP存儲器 |
| 文件頁數(shù)： | 7/15頁 |
| 文件大小： | 102K |
| 代理商： | M27W401-80XK6TR |
7/15
M27W401
Table 9. Programming Mode DC Characteristics
(1)
(T
A
= 25
°
C; V
CC
= 6.25V
±
0.25V; V
PP
= 12.75V
±
0.25V)
Symbol
Parameter
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
Table 10. Programming Mode AC Characteristics
(1)
(T
A
= 25
°
C; V
CC
= 6.25V
±
0.25V; V
PP
= 12.75V
±
0.25V)
Symbol
Alt
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Sampled only, not 100% tested.
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
CC
±
10
μ
A
I
CC
Supply Current
50
mA
I
PP
Program Current
E = V
IL
50
mA
V
IL
Input Low Voltage
–0.3
0.8
V
V
IH
Input High Voltage
2
V
CC
+ 0.5
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
V
OH
Output High Voltage TTL
I
OH
= –400
μ
A
2.4
V
V
ID
A9 Voltage
11.5
12.5
V
Parameter
Test Condition
Min
Max
Unit
t
AVEL
t
AS
Address Valid to Chip Enable Low
2
μ
s
t
QVEL
t
DS
Input Valid to Chip Enable Low
2
μ
s
t
VPHEL
t
VPS
V
PP
High to Chip Enable Low
2
μ
s
t
VCHEL
t
VCS
V
CC
High to Chip Enable Low
2
μ
s
t
ELEH
t
PW
Chip Enable Program Pulse Width
95
105
μ
s
t
EHQX
t
DH
Chip Enable High to Input Transition
2
μ
s
t
QXGL
t
OES
Input Transition to Output Enable Low
2
μ
s
t
GLQV
t
OE
Output Enable Low to Output Valid
100
ns
t
GHQZ
t
DFP
Output Enable High to Output Hi-Z
0
130
ns
t
GHAX
t
AH
Output Enable High to Address
Transition
0
ns
ming ’0’s into the desired bit locations. Although
only ’0’s will be programmed, both ’1’s and ’0’s can
be present in the data word. The only way to
change a ‘0’to a ‘1’ is by die exposure to ultraviolet
light (UV EPROM). The M27W401 is in the pro-
gramming mode when V
PP
input is at 12.75V, G is
at V
IH
and E is pulsed to V
IL
. The data to be pro-
grammed is applied to 8 bits in parallel to the data
output pins. The levels required for the address
and data inputs are TTL. V
CC
is specified to be
6.25V
±
0.25V
Programming
The M27W401 hasbeen designedto be fully com-
patible withthe M27C4001 and hasthe same elec-
tronic signature. As a result the M27W401 can be
programmed as the M27C4001 on the same pro-
gramming equipmentapplying 12.75V on V
PP
and
6.25V on V
CC
by the use of the same PRESTO II
algorithm.
When delivered (andafter each ‘1’serasure for UV
EPROM), all bits of the M27W401 are in the ’1’
state. Data is introduced by selectively program-
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M27W401-80XN6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| M27W402 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 256Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27W402-100B6 | 功能描述:可擦除可編程ROM 4M (256Kx16) 100ns RoHS:否 制造商:Maxim Integrated 類型: 存儲容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-92 |
| M27W402-100B6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 256Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27W402-100F6 | 制造商:STMicroelectronics 功能描述:256KX16 CMOS 3V - Rail/Tube |
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