參數(shù)資料
型號(hào): M27W401-100K6TR
廠商: 意法半導(dǎo)體
英文描述: 4 Mbit 512Kb x 8 Low Voltage UV EPROM and OTP EPROM
中文描述: 4兆位512KB的× 8低壓紫外線可擦寫(xiě)可編程只讀存儲(chǔ)器和OTP存儲(chǔ)器
文件頁(yè)數(shù): 1/15頁(yè)
文件大小: 102K
代理商: M27W401-100K6TR
1/15
March 2000
M27W401
4 Mbit (512Kb x 8) Low Voltage UV EPROM and OTP EPROM
I
2.7V to 3.6V LOW VOLTAGE in READ
OPERATION
I
ACCESS TIME:
– 70ns at V
CC
= 3.0V to 3.6V
– 80ns at V
CC
= 2.7V to 3.6V
I
PIN COMPATIBLE with M27C4001
I
LOW POWER CONSUMPTION:
– 15
μ
A max Standby Current
– 15mA max Active Current at 5MHz
I
PROGRAMMING TIME 100
μ
s/byte
I
HIGH RELIABILITY CMOS TECHNOLOGY
– 2,000V ESD Protection
– 200mA Latchup Protection Immunity
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 41h
DESCRIPTION
The M27W401 is a low voltage 4 Mbit EPROM of-
fered in the two ranges UV (ultra violet erase) and
OTP (one time programmable). It is ideally suited
for microprocessorsystems requiringlarge data or
program storage and is organised as 524,288 by 8
bits.
The M27W401 operates in the read mode with a
supply voltageas low as 2.7V at –40 to 85
°
C tem-
perature range. The decrease in operating power
allows either a reduction of the size of the battery
or an increase in the time between battery re-
charges.
The FDIP32W (window ceramic frit-seal package)
has a transparent lid which allows the user to ex-
pose the chipto ultraviolet light to erase the bit pat-
tern. A new pattern can then be written to the
device by following the programming procedure.
For application where the content is programmed
only one time and erasure is not required, the
M27W401 is offered in PDIP32, PLCC32 and
TSOP32 (8 x 20 mm) packages.
Figure 1. Logic Diagram
AI01590
19
A0-A18
Q0-Q7
VPP
VCC
M27W401
G
VSS
8
E
FDIP32W (F)
PLCC32 (K)
TSOP32 (N)
8 x 20 mm
1
32
32
1
PDIP32 (B)
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