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參數(shù)資料
| 型號： | M27W401-100B6TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 4 Mbit 512Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| 中文描述： | 4兆位512KB的× 8低壓紫外線可擦寫可編程只讀存儲器和OTP存儲器 |
| 文件頁數(shù)： | 6/15頁 |
| 文件大?。?/td> | 102K |
| 代理商： | M27W401-100B6TR |
M27W401
6/15
Figure 5. Read Mode AC Waveforms
AI00724B
tAXQX
tEHQZ
A0-A18
E
G
Q0-Q7
tAVQV
tGHQZ
tGLQV
tELQV
VALID
Hi-Z
VALID
Table 8. Read Mode AC Characteristics
(1)
(T
A
= –40 to 85
°
C; V
CC
= 2.7V to 3.6V; V
PP
= V
CC
)
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Sampled only, not 100% tested.
3. Speed obtained with High Speed AC measurement conditions.
Symbol
Alt
Parameter
Test
Condition
M27W401
Unit
-80
(3)
-100
(-120/-150/-200)
V
CC
= 3.0V to 3.6V V
CC
= 2.7V to 3.6V V
CC
= 2.7V to 3.6V
Min
Max
Min
Max
Min
Max
t
AVQV
t
ACC
Address Valid to
Output Valid
E = V
IL
,
G = V
IL
70
80
100
ns
t
ELQV
t
CE
Chip Enable Low to
Output Valid
G = V
IL
70
80
100
ns
t
GLQV
t
OE
Output Enable Low
to Output Valid
E = V
IL
40
50
60
ns
t
EHQZ(2)
t
DF
Chip Enable High
to Output Hi-Z
G = V
IL
0
50
0
50
0
60
ns
t
GHQZ(2)
t
DF
Output EnableHigh
to Output Hi-Z
E = V
IL
0
50
0
50
0
60
ns
t
AXQX
t
OH
Address Transition
to Output Transition
E = V
IL
,
G = V
IL
0
0
0
ns
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相關(guān)代理商/技術(shù)參數(shù) |
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| M27W401-100F6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (512Kb x 8) Low Voltage UV EPROM and OTP EPROM |
| M27W401-100F6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| M27W401-100K6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (512Kb x 8) Low Voltage UV EPROM and OTP EPROM |
| M27W401-100K6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| M27W401-100N6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (512Kb x 8) Low Voltage UV EPROM and OTP EPROM |
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