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參數(shù)資料
| 型號(hào)： | M27V512-200F1TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Quadruple 2-Input Positive-NAND Buffers/Drivers 14-PDIP 0 to 70 |
| 中文描述： | 512千位64Kb的x8低壓紫外線EPROM和檢察官辦公室存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 6/16頁(yè) |
| 文件大?。?/td> | 108K |
| 代理商： | M27V512-200F1TR |
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M27V512
6/16
Figure 5. Read Mode AC Waveforms
AI00735B
tAXQX
tEHQZ
A0-A15
E
G
Q0-Q7
tAVQV
tGHQZ
tGLQV
tELQV
VALID
Hi-Z
VALID
Table 8B. Read Mode AC Characteristics
(1)
(T
A
= 0 to 70
°
C or –40 to 85
°
C; V
CC
= 3.3V
±
10%; V
PP
= V
CC
))
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Sampled only, not 100% tested.
Symbol
Alt
Parameter
Test Condition
M27V512
Unit
-150
-200
Min
Max
Min
Max
t
AVQV
t
ACC
Address Valid to Output Valid
E = V
IL
, G = V
IL
150
200
ns
t
ELQV
t
CE
Chip Enable Low to Output Valid
G = V
IL
150
200
ns
t
GLQV
t
OE
Output Enable Low to Output Valid
E = V
IL
50
60
ns
t
EHQZ(2)
t
DF
Chip Enable High to Output Hi-Z
G = V
IL
0
40
0
50
ns
t
GHQZ(2)
t
DF
Output Enable High to Output Hi-Z
E = V
IL
0
40
0
50
ns
t
AXQX
t
OH
Address Transition to Output
Transition
E = V
IL
, G = V
IL
0
0
ns
Programming
The M27V512 has been designed to be fully com-
patible with the M27C512 and has the same elec-
tronic signature. As a result the M27V512 can be
programmed as the M27C512 on the same pro-
gramming equipments applying 12.75V on V
PP
and 6.25V on V
CC
by the use of the same PRES-
TO IIB algorithm. When delivered (and after each
erasure for UV EPROM), all bits of the M27V512
are in the ’1’ state. Data is introduced by selective-
ly programming ’0’s into the desired bit locations.
Although only ’0’s will be programmed, both ’1’s
and ’0’s can be present in the data word. The only
way tochange a ’0’ to a ’1’is by die exposure to ul-
traviolet light (UV EPROM).TheM27V512 is in the
programming mode when V
PP
input is at 12.75V
and E is pulsed toV
IL
. The data to be programmed
is applied to 8 bits in parallel to the data output
pins.The levels required for the address and data
inputs are TTL. V
CC
is specified to be 6.25V
±
0.25V.
The M27V512 can use PRESTO IIBProgramming
Algorithm that drastically reduces the program-
ming time (typically less than 6 seconds). Never-
theless
to
achieve
programming equipments, PRESTO Program-
ming Algorithm can be used as well.
compatibility
with
all
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| M27V512-150N6TR | 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M27V512-200F6TR | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM |
| M27V512-200K1TR | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM |
| M27V512-200K6TR | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM |
| M27V512-200N1TR | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM |
| M27V512-200N6TR | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM |
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