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參數(shù)資料
| 型號(hào)： | M27V402-120N5TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Switch Mode Power Supply; Output Power:100W; No. of Outputs:1; Output 1 VDC :12VDC; Output Current 1:8.5A; Power Supply Mounting:Open Frame; Approval Bodies:UL, CSA, CE; External Depth:222mm; External Width:62mm RoHS Compliant: Yes |
| 中文描述： | 4兆位的256Kb × 16低壓紫外線存儲(chǔ)器和OTP存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 9/15頁(yè) |
| 文件大?。?/td> | 101K |
| 代理商： | M27V402-120N5TR |
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M27V402
On-Board Programming
The M27V402 can be directly programmed in the
application circuit. See the relevant Application
Note AN620.
Electronic Signature
The Electronic Signature (ES) mode allows the
reading out of a binary code from an EPROM that
will identify its manufacturer and type. This mode
is intended for use by programming equipment to
automatically matchthe device to be programmed
with its corresponding programming algorithm.
The ES mode is functional in the 25
°
C
±
5
°
C am-
bient temperaturerange that is required when pro-
gramming theM27V402. To activatethe ES mode,
the programming equipment must force 11.5V to
12.5V on address line A9 of the M27V402 with
V
PP
=V
CC
=5V. Two identifier bytes may then be
sequenced fromthe device outputs by toggling ad-
dress line A0 from V
IL
to V
IH
. All other address
lines must be held at V
IL
during Electronic Signa-
ture mode. Byte 0 (A0=V
IL
) represents the manu-
facturer code and byte 1 (A0=V
IH
) the device
identifier
code.
For
M27V402, these two identifier bytes are given in
Table 4 and can be read-out on outputs Q0 to Q7.
the
STMicroelectronics
ERASURE OPERATION (
appliesto
UVEPROM)
The erasure characteristics of the M27V402 is
such that erasure begins when the cells are ex-
posed to light with wavelengths shorter than ap-
proximately 4000. Itshould benoted that sunlight
and some type of fluorescent lamps have wave-
lengths in the 3000-4000 range. Research
shows that constant exposure to room level fluo-
rescent lighting could erase a typical M27V402 in
about 3 years, while it would takeapproximately 1
week to cause erasure when exposed to direct
sunlight. If the M27V402 is to be exposed to these
types of lighting conditions for extended periods of
time, it is suggested that opaque labelsbeput over
the M27V402 window to prevent unintentional era-
sure. The recommended erasure procedure for
the M27V402 is exposure to short wave ultraviolet
light which has a wavelength of 2537. The inte-
grated dose (i.e. UV intensity x exposure time) for
erasure should be a minimum of 15 W-sec/cm
2
.
The erasure time with this dosage is approximate-
ly 15 to 20 minutes using an ultraviolet lamp with
12000
μ
W/cm
2
power rating. The M27V402
should be placed within 2.5 cm (1inch) of the lamp
tubes during the erasure. Somelamps have a filter
on their tubes which should be removed before
erasure.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M27V402-180N1TR | Quadruple 2-Input Positive-AND Gates 14-SOIC 0 to 70 |
| M27V512 | 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM |
| M27V512-100B1TR | 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM |
| M27V512-100B6TR | 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM |
| M27V512-100F1TR | 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M27V402-120N6TR | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:4 Mbit 512Kb x 8 Low Voltage OTP EPROM |
| M27V402-150B1TR | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:4 Mbit 256Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27V402-150B4TR | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:4 Mbit 256Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27V402-150B5TR | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:4 Mbit 256Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27V402-150B6TR | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:4 Mbit 256Kb x 16 Low Voltage UV EPROM and OTP EPROM |
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