參數(shù)資料
型號(hào): M27V400-100B1TR
廠商: 意法半導(dǎo)體
英文描述: 4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM
中文描述: 4兆位512KB的x8或256Kb的x16紫外線存儲(chǔ)器和OTP存儲(chǔ)器
文件頁(yè)數(shù): 8/14頁(yè)
文件大?。?/td> 117K
代理商: M27V400-100B1TR
M27V400
8/14
Figure 7. BYTE Transition AC Waveforms
Note: Chip Enable (E) and Output Enable (G) = V
IL
.
AI01638B
tAXQX
tBHQV
A0-A17
BYTEVPP
tAVQV
tBLQX
tBLQZ
VALID
Hi-Z
A–1
DATA OUT
DATA OUT
VALID
Q0-Q7
Q8-Q15
Table 9. Programming Mode DC Characteristics
(1)
(T
A
= 25 °C; V
CC
= 6.25V ± 0.25V; V
PP
= 12.5V ± 0.25V)
Symbol
Parameter
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0
V
IN
V
CC
±1
μ
A
I
CC
Supply Current
50
mA
I
PP
Program Current
E = V
IL
50
mA
V
IL
Input Low Voltage
–0.3
0.8
V
V
IH
Input High Voltage
2.4
V
CC
+ 0.5
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
V
OH
Output High Voltage TTL
I
OH
= –2.5mA
3.5
V
V
ID
A9 Voltage
11.5
12.5
V
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