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參數(shù)資料
| 型號： | M27V400-100B1TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM |
| 中文描述： | 4兆位512KB的x8或256Kb的x16紫外線存儲器和OTP存儲器 |
| 文件頁數(shù)： | 5/14頁 |
| 文件大小： | 117K |
| 代理商： | M27V400-100B1TR |
5/14
M27V400
Table 7. Read Mode DC Characteristics
(1)
(T
A
= 0 to 70 °C or –40 to 85 °C; V
CC
= 3.3V ± 5% or 3.3V ± 10%; V
PP
= V
CC
)
Symbol
Parameter
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Maximum DC voltage on Output is V
CC
+0.5V.
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
CC
±1
μA
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
CC
±10
μA
I
CC
Supply Current
E = V
IL
, G = V
IL
,
I
OUT
= 0mA, f = 8MHz
30
mA
E = V
IL
, G = V
IL
,
I
OUT
= 0mA, f = 5MHz
20
mA
I
CC1
Supply Current (Standby) TTL
E = V
IH
1
mA
I
CC2
Supply Current (Standby) CMOS
E > V
CC
– 0.2V
20
μA
I
PP
Program Current
V
PP
= V
CC
10
μA
V
IL
Input Low Voltage
–0.3
0.8
V
V
IH
(2)
Input High Voltage
2
V
CC
+ 1
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
V
OH
Output High Voltage TTL
I
OH
= –400μA
2.4
V
System Considerations
The power switching characteristics of Advanced
CMOS EPROMs require careful decoupling of the
supplies to the devices. The supply current I
CC
has three segments of importance to the system
designer: the standby current, the active current
and the transient peaks that are produced by the
falling and rising edges of E. The magnitude of the
transient current peaks is dependent on the ca-
pacitive and inductive loading of the device out-
puts. The associated transient voltage peaks can
be suppressed by complying with the two line out-
put control and by properly selected decoupling
capacitors. It is recommended that a 0.1μF ceram-
ic capacitor is used on every device between V
CC
and V
SS
. This should be a high frequency type of
low inherent inductance and should be placed as
close as possible to the device. In addition, a
4.7μF electrolytic capacitor should be used be-
tween V
CC
and V
SS
for every eight devices. This
capacitor should be mounted near the power sup-
ply connection point. The purpose of this capacitor
is to overcome the voltage drop caused by the in-
ductive effects of PCB traces.
Programming
When delivered (and after each erasure for UV
EPROM), all bits of the M27V400 are in the '1'
state. Data is introduced by selectively program-
ming '0's into the desired bit locations. Although
only '0's will be programmed, both '1's and '0's can
be present in the data word. The only way to
change a '0' to a '1' is by die exposition to ultravio-
let light (UV EPROM). The M27V400 is in the pro-
gramming mode when V
PP
input is at 12.5V, G is
at V
IH
and E is pulsed to V
IL
. The data to be pro-
grammed is applied to 16 bits in parallel to the data
output pins. The levels required for the address
and data inputs are TTL. V
CC
is specified to be
6.25V ± 0.25V.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| M27V400-100B6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM |
| M27V400-100F1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM |
| M27V400-100F6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM |
| M27V400-100XB1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM |
| M27V400-100XB6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM |
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