參數(shù)資料
型號: M27V102-90N1TR
廠商: 意法半導(dǎo)體
英文描述: 1 Mbit 64Kb x 16 Low Voltage UV EPROM and OTP EPROM
中文描述: 1兆位64Kb的× 16低壓紫外線存儲器和OTP存儲器
文件頁數(shù): 7/15頁
文件大?。?/td> 116K
代理商: M27V102-90N1TR
Symbol
Parameter
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0
V
IN
V
IH
±
10
μ
A
I
CC
Supply Current
50
mA
I
PP
Program Current
E = V
IL
50
mA
V
IL
Input Low Voltage
–0.3
0.8
V
V
IH
Input High Voltage
2
V
CC
+ 0.5
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
V
OH
Output High VoltageTTL
I
OH
= –400
μ
A
2.4
V
V
ID
A9 Voltage
11.5
12.5
V
Note:
1. V
CC
must be applied simultaneouslywith or before V
PP
and removed simultaneously with or afterV
PP
.
Table9. ProgrammingMode DCCharacteristics
(1)
(T
A
= 25
°
C; V
CC
= 6.25V
±
0.25V;V
PP
= 12.75V
±
0.25V)
Symbol
Alt
Parameter
Test Condition
Min
Max
Unit
t
AVPL
t
AS
Address Valid to Program Low
2
μ
s
t
QVPL
t
DS
Input Valid to Program Low
2
μ
s
t
VPHPL
t
VPS
V
PP
High to ProgramLow
2
μ
s
t
VCHPL
t
VCS
V
CC
High to Program Low
2
μ
s
t
ELPL
t
CES
Chip Enable Low to Program Low
2
μ
s
t
PLPH
t
PW
Program Pulse Width
95
105
μ
s
t
PHQX
t
DH
Program High to Input Transition
2
μ
s
t
QXGL
t
OES
Input Transition to Output Enable
Low
2
μ
s
t
GLQV
t
OE
Output EnableLow to Output Valid
100
ns
t
GHQZ
(2)
t
DFP
Output EnableHigh to Output Hi-Z
0
130
ns
t
GHAX
t
AH
Output EnableHigh to Address
Transition
0
ns
Notes:
1. V
must be applied simultaneouslywith or before V
PP
and removed simultaneously with or afterV
PP
.
2. Sampled only,not 100% tested.
Table10. ProgrammingMode AC Characteristics
(1)
(T
A
= 25
°
C; V
CC
= 6.25V
±
0.25V;V
PP
= 12.75V
±
0.25V)
7/15
M27V102
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