參數(shù)資料
型號: M27C1001-15BTR
廠商: 意法半導(dǎo)體
英文描述: 1 Mbit (128 Kbit x 8) UV EPROM and OTP EPROM
中文描述: 1兆位(128千位× 8)紫外線存儲器和OTP存儲器
文件頁數(shù): 10/24頁
文件大小: 153K
代理商: M27C1001-15BTR
Device description
M27C1001
10/24
Figure 5.
Programming Flowchart
2.7
Program Inhibit
Programming of multiple M27C1001s in parallel with different data is also easily
accomplished. Except for E, all like inputs including G of the parallel M27C1001 may be
common. A TTL low level pulse applied to a M27C1001's P input, with E low and V
PP
at
12.75V, will program that M27C1001. A high level E input inhibits the other M27C1001s from
being programmed.
2.8
Program Verify
A verify (read) should be performed on the programmed bits to determine that they were
correctly programmed. The verify is accomplished with E and G at V
IL
, P at V
IH
, V
PP
at
12.75V and V
CC
at 6.25V.
2.9
Electronic Signature
The Electronic Signature (ES) mode enables the reading out of a binary code from an
EPROM that will identify its manufacturer and type. This mode is intended for use by
programming equipment to automatically match the device to be programmed with its
corresponding programming algorithm. The ES mode is functional in the 25°C ± 5°C
ambient temperature range that is required when programming the M27C1001. To activate
the ES mode, the programming equipment must force 11.5V to 12.5V on address line A9 of
the M27C1001, with V
PP
= V
CC
= 5V. Two identifier bytes may then be sequenced from the
device outputs by toggling address line A0 from V
IL
to V
IH
. All other address lines must be
held at V
IL
during Electronic Signature mode.
AI00715C
n = 0
Last
Addr
VERIFY
P = 100
μ
s Pulse
++n
= 25
++ Addr
VCC = 6.25V, VPP = 12.75V
FAIL
CHECK ALL BYTES
1st: VCC = 6V
2nd: VCC = 4.2V
YES
NO
YES
NO
YES
NO
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