參數(shù)資料
型號(hào)： M25PE40VMW6TP
廠商： 意法半導(dǎo)體
英文描述： 2A Standard Fixed Output LDO Regulators; Package: TO220FP-3; Constitution materials list: Packing style: Tube packaging; Package quantity: 50; Minimum package quantity: 500;
中文描述： 4兆位，低電壓，頁(yè)式可擦除的字節(jié)變性，50MHz的SPI總線，標(biāo)準(zhǔn)引腳串行閃存
文件頁(yè)數(shù)： 39/60頁(yè)
文件大?。?/td> 315K
代理商： M25PE40VMW6TP
M25PE40
Instructions
39/60
6.15
Bulk Erase (BE)
Note:
The Bulk Erase (BE) instruction is decoded only in the in the T9HX process (see
Important
note on page 6
).
The Bulk Erase (BE) instruction sets all bits to 1 (FFh). Before it can be accepted, a Write
Enable (WREN) instruction must previously have been executed. After the Write Enable
(WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL).
The Bulk Erase (BE) instruction is entered by driving Chip Select (S) Low, followed by the
instruction code on Serial Data Input (D). Chip Select (S) must be driven Low for the entire
duration of the sequence.
The instruction sequence is shown in
Figure 21
.
Chip Select (S) must be driven High after the eighth bit of the instruction code has been
latched in, otherwise the Bulk Erase instruction is not executed. As soon as Chip Select (S)
is driven High, the self-timed Bulk Erase cycle (whose duration is t
BE
) is initiated. While the
Bulk Erase cycle is in progress, the Status Register may be read to check the value of the
Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Bulk
Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is
completed, the Write Enable Latch (WEL) bit is reset.
Any Bulk Erase (BE) instruction, while an Erase, Program or Write cycle is in progress, is
rejected without having any effects on the cycle that is in progress. A Bulk Erase (BE)
instruction is ignored if at least one sector or subsector is write-protected (Hardware or
Software protection).
If Reset (Reset) is driven Low while a Bulk Erase (BE) cycle is in progress, the Bulk Erase
cycle is interrupted and data may not be erased correctly (see
Table 12: Device status after
a Reset Low pulse
). On Reset going Low, the device enters the Reset mode and a time of
t
RHSL
is then required before the device can be re-selected by driving Chip Select (S) Low.
For the value of t
RHSL
see
Table 22: Timings after a Reset Low pulse
in
Section 11: DC and
AC parameters
.
Figure 21.
Bulk Erase (BE) instruction sequence
C
D
AI03752D
S
2
1
3
4
5
6
7
0
Instruction
相關(guān)PDF資料
PDF描述
M25PE80-VMN6G 4 Mbit Uniform Sector, Serial Flash Memory
M25PE80-VMN6P 2A Standard Fixed Output LDO Regulators with Shutdown Switch; Package: TO220FP-5; Constitution materials list: Packing style: Tube packaging; Package quantity: 50; Minimum package quantity: 500;
M25PE80-VMN6TG 4 Mbit Uniform Sector, Serial Flash Memory
M25PE80-VMN6TP 4 Mbit Uniform Sector, Serial Flash Memory
M25PX32 4 Mbit Uniform Sector, Serial Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M25PE40-VMW6TP 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout
M25PE40-WMW6TG 制造商:Micron Technology Inc 功能描述:4MB SERIAL FLASH - Tape and Reel
M25PE80 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory with Byte-Alterability, 50MHz SPI Bus, Standard Pin-out
M25PE80-VMN6G 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout
M25PE80-VMN6P 功能描述:閃存 SERIAL FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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