參數(shù)資料
型號： M25PE40VMP6TG
廠商： 意法半導(dǎo)體
元件分類： DRAM
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 4兆位統(tǒng)一部門，串行閃存
文件頁數(shù)： 30/60頁
文件大?。?/td> 315K
代理商： M25PE40VMP6TG
Instructions
M25PE40
30/60
6.8
Read Lock Register (RDLR)
Note:
The Read Lock Register (RDLR) instruction is decoded only in the in the T9HX process
(see
Important note on page 6
).
The device is first selected by driving Chip Select (S) Low. The instruction code for the Read
Lock Register (RDLR) instruction is followed by a 3-byte address (A23-A0) pointing to any
location inside the concerned sector (or subsector). Each address bit is latched-in during
the rising edge of Serial Clock (C). Then the value of the Lock Register is shifted out on
Serial Data Output (Q), each bit being shifted out, at a maximum frequency f
C
, during the
falling edge of Serial Clock (C).
The instruction sequence is shown in
Figure 14
.
The Read Lock Register (RDLR) instruction is terminated by driving Chip Select (S) High at
any time during data output.
Any Read Lock Register (RDLR) instruction, while an Erase, Program or Write cycle is in
progress, is rejected without having any effects on the cycle that is in progress.
Table 9.
Figure 14.
Read Lock Register (RDLR) instruction sequence and data-out Sequence
Lock Registers
Bit
Bit Name
Value
Function
b7-b4
Reserved
b1
Sector Lock
Down
‘1’
The Write Lock and Lock Down Bits cannot be changed. Once a
‘1’ is written to the Lock Down Bit it cannot be cleared to ‘0’,
except by a Reset or power-up.
‘0’
The Write Lock and Lock Down Bits can be changed by writing
new values to them. (Default value).
b0
Sector Write
Lock
‘1’
Write, Program and Erase operations in this sector will not be
executed. The memory contents will not be changed.
‘0’
Write, Program and Erase operations in this sector are executed
and will modify the sector contents. (Default value).
C
D
AI10783
S
Q
23
2
1
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35
22 21
3
2
1
0
36 37 38
7
6
5
4
3
1
0
High Impedance
Lock Register Out
Instruction
24-Bit Address
0
MSB
MSB
2
39
相關(guān)PDF資料
PDF描述
M25PE40VMP6TP 2A Standard Fixed Output LDO Regulators; Package: TO220FP-3; Constitution materials list: Packing style: Tube packaging; Package quantity: 50; Minimum package quantity: 500;
M25PE40VMW6G 4 Mbit Uniform Sector, Serial Flash Memory
M25PE40VMW6P 2A Standard Fixed Output LDO Regulators with Shutdown Switch; Package: TO220FP-5; Constitution materials list: Packing style: Tube packaging; Package quantity: 50; Minimum package quantity: 500;
M25PE40VMW6TG 4 Mbit Uniform Sector, Serial Flash Memory
M25PE40VMW6TP 2A Standard Fixed Output LDO Regulators; Package: TO220FP-3; Constitution materials list: Packing style: Tube packaging; Package quantity: 50; Minimum package quantity: 500;
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M25PE40-VMP6TG 功能描述:閃存 SERIAL PAGE ERASE FLASH 4Mbit Datas RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M25PE40VMP6TP 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout
M25PE40-VMP6TP 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout
M25PE40VMW6G 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout
M25PE40-VMW6G 功能描述:閃存 4 Mbit Lo Vltg Page Erasable Seral 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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