參數(shù)資料
型號(hào)： M25PE40VMP6P
廠商： 意法半導(dǎo)體
元件分類： DRAM
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 4兆位統(tǒng)一部門，串行閃存
文件頁數(shù)： 6/60頁
文件大小： 315K
代理商： M25PE40VMP6P
Description
M25PE40
6/60
1
Description
The is a 4 Mbit (512Kb × 8 bit) Serial Paged Flash memory accessed by a high speed SPI-
compatible bus.
The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or
Page Program instruction. The Page Write instruction consists of an integrated Page Erase
cycle followed by a Page Program cycle.
The memory is organized as 8 sectors that are further divided up into 16 subsectors each
(128 subsectors in total). Each sector contains 256 pages and each subsector contains 16
pages. Each page is 256 bytes wide. Thus, the whole memory can be viewed as consisting
of 2048 pages, or 524,288 bytes.
The memory can be erased a page at a time, using the Page Erase instruction, a subsector
at a time, using the SubSector Erase instruction, a sector at a time, using the Sector Erase
instruction or as a whole, using the Bulk Erase (BE) instruction..
The memory can be Write Protected by either Hardware or Software using a mix of volatile
and non-volatile protection features, depending on the application needs. The protection
granularity is of 64 Kbytes (sector granularity).
In order to meet environmental requirements, ST offers the in ECOPACK packages.
ECOPACK packages are Lead-free and RoHS compliant.
ECOPACK is an ST trademark. ECOPACK specifications are available at:
www.st.com
.
Important note
This datasheet details the functionality of the devices, based on the previous T7X process
or based on the current T9HX process. Delivery of parts in T9HX process starts from July
2007.
What are the changes
The in T9HX process offers the following additional features:
the whole memory array is partitioned into 4-Kbyte subsectors
five new instructions: Write Status Register (WRSR), Write to Lock Register (WRLR),
Read Lock Register (RDLR), 4-Kbyte SubSector Erase (SSE) and Bulk Erase (BE)
Status Register: 4 bits can be written (BP0, BP1, BP2, SRWD)
WP input (pin 3): Write protection limits are extended, depending on the value of the
BP0, BP1, BP2, SRWD bits. The WP Write protection remains the same if bits (BP2,
BP1, BP0) are set to (0, 0, 1).
smaller die size allowing assembly into an SO8N package
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相關(guān)PDF資料
PDF描述
M25PE40VMP6TG 4 Mbit Uniform Sector, Serial Flash Memory
M25PE40VMP6TP 2A Standard Fixed Output LDO Regulators; Package: TO220FP-3; Constitution materials list: Packing style: Tube packaging; Package quantity: 50; Minimum package quantity: 500;
M25PE40VMW6G 4 Mbit Uniform Sector, Serial Flash Memory
M25PE40VMW6P 2A Standard Fixed Output LDO Regulators with Shutdown Switch; Package: TO220FP-5; Constitution materials list: Packing style: Tube packaging; Package quantity: 50; Minimum package quantity: 500;
M25PE40VMW6TG 4 Mbit Uniform Sector, Serial Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M25PE40-VMP6P 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout
M25PE40VMP6TG 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout
M25PE40-VMP6TG 功能描述:閃存 SERIAL PAGE ERASE FLASH 4Mbit Datas RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M25PE40VMP6TP 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout
M25PE40-VMP6TP 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout
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