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參數(shù)資料
| 型號： | M25PE40VMP6P |
| 廠商： | 意法半導體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 59/60頁 |
| 文件大小： | 315K |
| 代理商： | M25PE40VMP6P |
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M25PE40
Revision history
59/60
15-Jan-2007
6
50 MHz frequency added. SO8N package added, VFQFPN and
SO8W package specifications updated (see
Section 12: Package
mechanical
).
The sectors are further divided up into subsectors (see
Table 4:
Memory organization
).
Important note on page 6
added.
Figure 4:
Bus master and memory devices on the SPI bus
updated and
explanatory paragraph added.
V
CC
supply voltage
and
V
SS
ground
added.
Section 4.8: Protection modes
modified.
Section 8: Reset
added, Reset timings table split into
Table 21: Reset conditions
and
Table 22: Timings after a Reset Low pulse
.
At Power-up the WIP bit is reset (see
Section 7: Power-up and
Power-down
).
V
IO
max changed in
Table 13: Absolute maximum ratings
. End
timing line of t
SHQZ
moved in
Figure 28: Output timing
.
products processed in T9HX process added to datasheet:
– WP pin replaces TSL (T7X technology), see
Section 2.6: Write
Protect (W) or Top Sector Lock (TSL)
–
Write Status Register (WRSR)
and
SubSector Erase (SSE)
instructions added for T9HX process
– subsector protection granularity removed in T9HX process, still
exists in T7X process
–
Table 4: Memory organization
updated to show subsectors
– Status Register
BP2, BP1, BP0 bits
and
SRWD bit
added.
Small text changes.
23-Jan-2007
7
T7X process name corrected.
Write Enable Latch (WEL) bit is reset also on completion of the
SubSector Erase, Bulk Erase, Write to Lock Register and Write
Status Register instructions (see
Section 6.2: Write Disable
(WRDI)
).
Address bit A20 is
not
Don’t Care (
Note 1
modified) in the
Sector
Erase (SE) instruction sequence
.. SO8N package is only available
in products manufactured in the T9HX process.
Table 27.
Document revision history
Date
Revision
Changes
相關PDF資料 |
PDF描述 |
|---|---|
| M25PE40VMP6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE40VMP6TP | 2A Standard Fixed Output LDO Regulators; Package: TO220FP-3; Constitution materials list: Packing style: Tube packaging; Package quantity: 50; Minimum package quantity: 500; |
| M25PE40VMW6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE40VMW6P | 2A Standard Fixed Output LDO Regulators with Shutdown Switch; Package: TO220FP-5; Constitution materials list: Packing style: Tube packaging; Package quantity: 50; Minimum package quantity: 500; |
| M25PE40VMW6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M25PE40-VMP6P | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout |
| M25PE40VMP6TG | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout |
| M25PE40-VMP6TG | 功能描述:閃存 SERIAL PAGE ERASE FLASH 4Mbit Datas RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M25PE40VMP6TP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout |
| M25PE40-VMP6TP | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout |
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