參數(shù)資料
型號(hào)： M25PE20-VMP6TP
廠商： 意法半導(dǎo)體
元件分類(lèi)： DRAM
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 4兆位統(tǒng)一部門(mén)，串行閃存
文件頁(yè)數(shù)： 38/60頁(yè)
文件大小： 310K
代理商： M25PE20-VMP6TP
Instructions
M25PE20, M25PE10
38/60
6.12
Page Erase (PE)
The Page Erase (PE) instruction sets to 1 (FFh) all bits inside the chosen page. Before it can
be accepted, a Write Enable (WREN) instruction must previously have been executed. After
the Write Enable (WREN) instruction has been decoded, the device sets the Write Enable
Latch (WEL).
The Page Erase (PE) instruction is entered by driving Chip Select (S) Low, followed by the
instruction code, and three address Bytes on Serial Data Input (D). Any address inside the
Page is a valid address for the Page Erase (PE) instruction. Chip Select (S) must be driven
Low for the entire duration of the sequence.
The instruction sequence is shown in
Figure 19
.
Chip Select (S) must be driven High after the eighth bit of the last address Byte has been
latched in, otherwise the Page Erase (PE) instruction is not executed. As soon as Chip
Select (S) is driven High, the self-timed Page Erase cycle (whose duration is t
PE
) is initiated.
While the Page Erase cycle is in progress, the Status Register may be read to check the
value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-
timed Page Erase cycle, and is 0 when it is completed. At some unspecified time before the
cycle is complete, the Write Enable Latch (WEL) bit is reset.
A Page Erase (PE) instruction applied to a page that is Hardware Protected is not executed.
Any Page Erase (PE) instruction, while an Erase, Program or Write cycle is in progress, is
rejected without having any effects on the cycle that is in progress.
Figure 19.
Page Erase (PE)
instruction sequence
1.
Address bits A23 to A18 are Don’t Care in the M25PE20. Address bits A23 to A17 are Don’t Care in the
M25PE10.
24 Bit Address
C
D
AI04046
S
2
1
3
4
5
6
7
8
9
29 30 31
Instruction
0
23 22
2
0
1
MSB
相關(guān)PDF資料
PDF描述
M25PE10-VMN6P 4 Mbit Uniform Sector, Serial Flash Memory
M25PE10-VMP6G 4 Mbit Uniform Sector, Serial Flash Memory
M25PE10-VMP6P 4 Mbit Uniform Sector, Serial Flash Memory
M25PE10-VMP6TG 4 Mbit Uniform Sector, Serial Flash Memory
M25PE10-VMP6TP 4 Mbit Uniform Sector, Serial Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M25PE20-VMS6G 制造商:Micron Technology Inc 功能描述:
M25PE20-VMW6G 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Trays
M25PE20-VMW6TG 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Tape and Reel
M25PE40 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout
M25PE40S-VMW6G 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 4MBIT 75MHZ 8SO
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