參數(shù)資料
型號(hào)： M25PE20_07
廠商： 意法半導(dǎo)體
元件分類： DRAM
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 4兆位統(tǒng)一部門，串行閃存
文件頁數(shù)： 6/60頁
文件大小： 310K
代理商： M25PE20_07
Description
M25PE20, M25PE10
6/60
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Description
The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) Serial
Paged Flash memories, respectively. They are accessed by a high speed SPI-compatible
bus.
The memories can be written or programmed 1 to 256 Bytes at a time, using the Page Write
or Page Program instruction. The Page Write instruction consists of an integrated Page
Erase cycle followed by a Page Program cycle.
The M25PE20 memory is organized as 4 sectors, each containing 256 pages. Each page is
256 Bytes wide. Thus, the whole memory can be viewed as consisting of 1024 pages, or
262,144 Bytes.
The M25PE10 memory is organized as 2 sectors, each containing 256 pages. Each page is
256 Bytes wide. Thus, the whole memory can be viewed as consisting of 512 pages, or 131,
072 Bytes.
The memories can be erased a page at a time, using the Page Erase instruction, a
subsector at a time, using the SubSector Erase instruction, a sector at a time, using the
Sector Erase instruction or as a whole, using the Bulk Erase instruction.
The memory can be Write Protected by either Hardware or Software using a mix of volatile
and non-volatile protection features, depending on the application needs. The protection
granularity is of 64 Kbytes (sector granularity).
In order to meet environmental requirements, ST offers the M25PE20 and M25PE10 in
ECOPACK packages. ECOPACK packages are Lead-free and RoHS compliant.
ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.
Important note
This datasheet details the functionality of the M25PE20 and M25PE10 devices, based on
the previous T7X process or based on the current T9HX process. Delivery of parts in T9HX
process starts from August 2007.
What are the changes
The M25PE10/M25PE20 in T9HX process offers the following additional features:
the whole memory array is partitioned into 4-Kbyte subsectors
five new instructions: Write Status Register (WRSR), Write to Lock Register (WRLR),
Read Lock Register (RDLR), 4-Kbyte SubSector Erase (SSE) and Bulk Erase (BE)
Status Register: 3 bits can be written (BP0, BP1, SRWD)
WP input (pin 3): Write protection limits are extended, depending on the value of the
BP0, BP1, SRWD bits. The WP Write protection remains the same if bits (BP1, BP0)
are set to (0, 1) or (1, 0)
VFQFPN8 6 × 5 mm package added
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相關(guān)PDF資料
PDF描述
M25PE20-VMN6G 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20-VMN6P 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20-VMN6TG 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20-VMN6TP 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20-VMP6G 4 Mbit Uniform Sector, Serial Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M25PE20-V6D11 制造商:Micron Technology Inc 功能描述:SERIAL NOR 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Gel-pak, waffle pack, wafer, diced wafer on film
M25PE20-VMN6G 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout
M25PE20-VMN6P 功能描述:閃存 1 AND 2 MBIT LV SERIAL FL RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M25PE20-VMN6P_NUD 制造商:Micron Technology Inc 功能描述:
M25PE20-VMN6TG 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout
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