參數(shù)資料
型號: M25P80VMW3P
廠商: STMICROELECTRONICS
元件分類: PROM
英文描述: 1M X 8 FLASH 2.7V PROM, PDSO8
封裝: 0.200 INCH, ROHS COMPLIANT, PLASTIC, SO-8
文件頁數(shù): 18/41頁
文件大?。?/td> 563K
代理商: M25P80VMW3P
25/41
M25P80
Figure 19. Release from Deep Power-down (RES) Instruction Sequence
Driving Chip Select (S) High after the 8-bit instruc-
tion byte has been received by the device, but be-
fore the whole of the 8-bit Electronic Signature has
been transmitted for the first time (as shown in Fig-
ure 19.), still insures that the device is put into
Stand-by Power mode. If the device was not pre-
viously in the Deep Power-down mode, the transi-
tion to the Stand-by Power mode is immediate. If
the device was previously in the Deep Power-
down mode, though, the transition to the Stand-by
Power mode is delayed by tRES1, and Chip Select
(S) must remain High for at least tRES1(max), as
specified in Table 17.. Once in the Stand-by Power
mode, the device waits to be selected, so that it
can receive, decode and execute instructions.
C
D
AI04078B
S
2
1
34567
0
tRES1
Stand-by Mode
Deep Power-down Mode
Q
High Impedance
Instruction
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