- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377802 > M25P32 (意法半導(dǎo)體) 4 Mbit Uniform Sector, Serial Flash Memory PDF資料下載
參數(shù)資料
| 型號： | M25P32 |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 47/48頁 |
| 文件大小： | 386K |
| 代理商： | M25P32 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁當(dāng)前第47頁第48頁
M25P32
Revision history
47/48
13
Revision history
Table 18.
Document Revision History
Date
Revision
Changes
28-Apr-2003
0.1
Target Specification Document written in brief form
15-May-2003
0.2
Target Specification Document written in full
20-Jun-2003
0.3
8x6 MLP8 and SO16(300 mil) packages added
18-Jul-2003
0.4
t
PP
, t
SE
and t
BE
revised
24-Sep-2003
0.5
SO16 package code changed. Output Timing Reference Voltage
changed.
04-Dec-2003
0.6
Table of contents, warning about exposed paddle on MLP8, and Pb-free
options added.
Value of t
VSL
(min) V
WI
, t
PP
(typ) and t
BE
(typ) changed. Change of naming
for VDFPN8 package.
10-Dec-2003
1.0
Document promoted to Product Preview
01-Apr-2004
2.0
Document promoted to Preliminary Data. Soldering temperature
information clarified for RoHS compliant devices. Device grade
information clarified
05-Aug-2004
3.0
Device grade information further clarified
01-Oct-2004
4.0
Document promoted to mature datasheet. Footnotes removed from P and
G options in Ordering Information table. Minor wording improvements
made.
01-Apr-2005
5.0
Read Identification (RDID)
,
Deep Power-down (DP)
and
Release from
Deep Power-down and Read Electronic Signature (RES)
instructions, and
Active Power, Standby Power and Deep Power-Down Modes
paragraph
clarified.
01-Aug-2005
6.0
Updated Page Program (PP) instructions in
Page Programming
,
Page
Program (PP)
and
Table 14: AC Characteristics
.
23-Jan-2006
7.0
Fast Program/Erase mode
added and Power-up specified for Fast
Program/Erase mode in
Power-up and Power-down
section. W pin
changed to W/V
PP
. (see
Write Protect/Enhanced Program Supply Voltage
(W/VPP)
description).
t
VPPHSL
added to
Table 14: AC Characteristics
and t
PP
for Fast
Program/Erase mode added.
Figure 27: VPPH timing
inserted. Note
2
added below
Figure 28
All packages are ECOPACK compliant. Blank
option removed under
Plating Technology
in
Table 17
10-Feb-2006
8.0
VDFPN8 package specifications updated (see
Section 11: Package
mechanical
).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25P40 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE10-VMN6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE20-VMP6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE10-VMN6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE10-VMP6G | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25P32-V6D11 | 制造商:Micron Technology Inc 功能描述:32MX1 NOR FLASH DIE-COM 3.0V 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Gel-pak, waffle pack, wafer, diced wafer on film |
| M25P32VME3 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P32VME3G | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P32VME3P | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P32VME3T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。