參數(shù)資料
型號(hào): M25P32
廠商: 意法半導(dǎo)體
元件分類(lèi): DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門(mén),串行閃存
文件頁(yè)數(shù): 41/48頁(yè)
文件大小: 386K
代理商: M25P32
M25P32
DC and AC parameters
41/48
Figure 23.
Serial Input Timing
t
SE
Sector Erase Cycle Time
1
3
s
Sector Erase Cycle Time (V
PP
= V
PPH
)
0.8
3
s
t
BE
Bulk Erase Cycle Time
34
80
s
Bulk Erase Cycle Time (V
PP
= V
PPH
)
17
80
s
1.
t
CH
+ t
CL
must be greater than or equal to 1/ fC(max)
Value guaranteed by characterization, not 100% tested in production.
2.
3.
Expressed as a slew-rate.
4.
Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
5.
V
should be kept at a valid level until the program or erase operation has completed and its result (success or failure) is
known.
6.
When using the Page Program (PP) instruction to program consecutive Bytes, optimized timings are obtained with one
sequence including all the Bytes versus several sequences of only a few Bytes. (1
n
256)
Table 14.
AC Characteristics (continued)
Test conditions specified in
Table 10
and
Table 11
Symbol
Alt.
Parameter
Min.
Typ.
Max.
Unit
C
D
AI01447C
S
MSB IN
Q
tDVCH
High Impedance
LSB IN
tSLCH
tCHDX
tCHCL
tCLCH
tSHCH
tSHSL
tCHSH
tCHSL
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