參數(shù)資料
型號(hào): M25P20-VMN34
廠商: 意法半導(dǎo)體
元件分類: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門,串行閃存
文件頁(yè)數(shù): 24/39頁(yè)
文件大小: 230K
代理商: M25P20-VMN34
M25P20
24/39
Figure 19. Release from Deep Power-down (RES) Instruction Sequence
Driving Chip Select (S) High after the 8
-
bit instruc-
tion byte has been received by the device, but be-
fore the whole of the 8-bit Electronic Signature has
been transmitted for the first time (as shown in
Fig-
ure 19.
), still insures that the device is put into
Stand-by Power mode. If the device was not pre-
viously in the Deep Power-down mode, the transi-
tion to the Stand-by Power mode is immediate. If
the device was previously in the Deep Power-
down mode, though, the transition to the Stand-by
Power mode is delayed by t
RES1
, and Chip Select
(S) must remain High for at least t
RES1
(max), as
specified in
Table 17.
. Once in the Stand-by Power
mode, the device waits to be selected, so that it
can receive, decode and execute instructions.
C
D
AI04078B
S
2
1
3
4
5
6
7
0
t
RES1
Stand-by Mode
Deep Power-down Mode
Q
High Impedance
Instruction
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