參數(shù)資料
型號(hào): M25P20-VMN34
廠商: 意法半導(dǎo)體
元件分類: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門,串行閃存
文件頁(yè)數(shù): 11/39頁(yè)
文件大?。?/td> 230K
代理商: M25P20-VMN34
11/39
M25P20
MEMORY ORGANIZATION
The memory is organized as:
262,144 bytes (8 bits each)
4 sectors (512 Kbits, 65536 bytes each)
1024 pages (256 bytes each).
Each page can be individually programmed (bits
are programmed from 1 to 0). The device is Sector
or Bulk Erasable (bits are erased from 0 to 1) but
not Page Erasable.
Table 3. Memory Organization
Figure 7. Block Diagram
Sector
Address Range
3
30000h
3FFFFh
2
20000h
2FFFFh
1
10000h
1FFFFh
0
00000h
0FFFFh
AI04079
HOLD
S
W
Control Logic
High Voltage
Generator
I/O Shift Register
Address Register
and Counter
256 Byte
Data Buffer
256 Bytes (Page Size)
X Decoder
Y
C
D
Q
Status
Register
00000h
10000h
20000h
30000h
3FFFFh
000FFh
Size of the
read-only
memory area
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