參數(shù)資料
型號(hào): M13S64164A
廠商: Elite Semiconductor Memory Technology Inc.
英文描述: 1M x 16 Bit x 4 Banks Double Data Rate SDRAM
中文描述: 100萬× 16位× 4個(gè)銀行雙倍數(shù)據(jù)速率SDRAM
文件頁數(shù): 36/49頁
文件大?。?/td> 1526K
代理商: M13S64164A
ES MT
Preliminary
M13S64164A
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2007
Revision : 0.3 36/49
Read with Auto Precharge (@BL=8)
Note 1.
The row active command of the precharge bank can be issued after t
RP
from this point.
The new read/write command of another activated bank can be issued from this point.
At burst read/write with auto precharge, CAS interrupt of the same bank is illegal.
C K E
C S
R A S
C A S
BA 0 , BA 1
W E
DQS( CL= 3)
DQ( CL= 3)
0
1
2
3
4
5
6
7
8
9
10
HIGH
D M
CO M M AN D
A
10
/AP
ADDR
(A0~ An )
BAa
Qa4
Qa5
Qa7
Qa6
BAa
t
R P
Qa0
Qa1
Qa3
Qa2
ACTIVE
READ
C a
Au t o p r e c h ar g e s t a r t
Note1
C L K
C L K
R a
R a
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參數(shù)描述
M13S64164A_09 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S64164A_1 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S64164A-5BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S64164A-5BIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S64164A-5TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Double Data Rate SDRAM