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參數(shù)資料
| 型號： | M12JZ47 |
| 廠商： | Toshiba Corporation |
| 英文描述： | AC POWER CONTROL APPLICATIONS |
| 中文描述： | 交流電源控制應(yīng)用 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 208K |
| 代理商： | M12JZ47 |
SM12GZ47,SM12JZ47,SM12GZ47A,SM12JZ47A
2001-07-10
2
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
TYP.
MAX
UNIT
Repetitive Peak Off
State Current
I
DRM
V
DRM
= Rated
―
―
20
μA
I
T2 (+) , Gate (+)
―
―
1.5
II
T2 (+) , Gate (
)
―
―
1.5
III
T2 (
) , Gate (
)
―
―
1.5
Gate Trigger Voltage
IV
V
GT
V
D
= 12V,
R
L
= 20
T2 (
) , Gate (+)
―
―
―
V
I
T2 (+) , Gate (+)
―
―
30
II
T2 (+) , Gate (
)
―
―
30
III
T2 (
) , Gate (
)
―
―
30
SM12GZ47
SM12JZ47
IV
T2 (
) , Gate (+)
―
―
―
I
T2 (+) , Gate (+)
―
―
20
II
T2 (+) , Gate (
)
―
―
20
III
T2 (
) , Gate (
)
―
―
20
Gate Trigger
Current
SM12GZ47A
SM12JZ47A
IV
I
GT
V
D
= 12V,
R
L
= 20
T2 (
) , Gate (+)
―
―
―
mA
Peak On
State Voltage
V
TM
I
TM
= 17A
―
―
1.5
V
Gate Non
Trigger Voltage
V
GD
V
D
= Rated, Tc = 125°C
0.2
―
―
V
Holding Current
I
H
V
D
= 12V, I
TM
= 1A
―
―
50
mA
Thermal Resistance
R
th (j
c)
Junction to Case, AC
―
―
3.0
°C / W
SM12GZ47
SM12JZ47
―
300
―
Critical Rate of
Rise of Off
State
Voltage
SM12GZ47A
SM12JZ47A
dv / dt
V
DRM
= Rated, T
j
= 125°C
Exponential Rise
―
200
―
V / μs
SM12GZ47
SM12JZ47
10
―
―
Critical Rate of
Rise of Off
State
Voltage at
Commutation
SM12GZ47A
SM12JZ47A
(dv / dt) c
V
DRM
= 400V, T
j
= 125°C
(di / dt) c =
6.5A / ms
4
―
―
V / μs
MARKING
*NUMBER
SYMBOL
MARK
*1
TOSHIBA PRODUCT MARK
SM12GZ47, SM12GZ47A
M12GZ47
*2
SM12JZ47, SM12JZ47A
M12JZ47
*3
TYPE
SM12GZ47A, SM12JZ47A
A
*4
Example
8A: January 1998
8B: February 1998
8L: December 1998
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