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參數(shù)資料
| 型號： | M12JZ47 |
| 廠商： | Toshiba Corporation |
| 英文描述： | AC POWER CONTROL APPLICATIONS |
| 中文描述： | 交流電源控制應(yīng)用 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 208K |
| 代理商： | M12JZ47 |
SM12GZ47,SM12JZ47,SM12GZ47A,SM12JZ47A
2001-07-10
1
TOSHIBA BI
DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM12GZ47,SM12JZ47,SM12GZ47A,SM12JZ47A
AC POWER CONTROL APPLICATIONS
Repetitive Peak off
State Voltage : V
DRM
= 400, 600V
R.M.S On
State Current
High Commutating (dv / dt)
Isolation Voltage
MAXIMUM RATINGS
: I
T (RMS)
=
1
2A
: V
Isol
=
1
500V AC
CHARACTERISTIC
SYMBOL
RATING
UNIT
SM12GZ47
SM12GZ47A
400
Repetitive Peak
Off
State Voltage and
Repetitive Peak
Reverse Voltage
SM12JZ47
SM12JZ47A
V
DRM
600
V
R. M. S. On
tate Current
(Full Sine Waveform TC = 72°C)
I
T (RMS)
12
A
120 (50Hz)
Peak One Cylce Surge On
State
Current (Non
Repetitive)
I
TSM
132 (60Hz)
A
I
2
t Limit Value
I
2
t
72
A
2
s
Critical Rate of Rise of On-State
Current
(Note 1)
di / dt
50
A / μs
Peak Gate Power Dissipation
P
GM
5
W
Average Gate Power Dissipation
P
G (AV)
0.5
W
Peak Gate Voltage
V
FGM
10
V
Peak Gate Current
I
GM
2
A
Junction Temperature
T
j
40~125
°C
Storage Temperature Range
T
stg
40~125
°C
Isolation Voltage (AC, t = 1min.)
V
Isol
1500
V
Unit: mm
JEDEC
JEITA
TOSHIBA
Weight: 1.7g
―
―
13
10H1A
Note 1: di / dt test condition
V
DRM
= 0.5 × Rated
I
TM
≤
17A
t
gw
≥
10μs
t
gr
≤
250ns
i
gp
= I
GT
× 2.0
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