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參數(shù)資料
| 型號： | LZ1418E100R |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN microwave power transistor |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | METAL CERAMIC, SOT-443A, 3 PIN |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 66K |
| 代理商： | LZ1418E100R |
1997 Feb 18
4
Philips Semiconductors
Product specification
NPN microwave power transistor
LZ1418E100R
THERMAL CHARACTERISTICS
Note
1.
See “Mounting recommendations in the General part of handbook SC19a”.
CHARACTERISTICS
T
mb
= 25
°
C unless otherwise specified.
APPLICATION INFORMATION
Microwave performance up to T
mb
= 25
°
C in a common emitter class-A wideband amplifier; note 1.
Note
1.
Amplifier consists of test circuit board without any additional tuning.
SYMBOL
PARAMETER
CONDITIONS
T
j
= 75
°
C
T
j
= 75
°
C; note 1
MAX.
UNIT
R
th j-mb
R
th mb-h
thermal resistance from junction to mounting-base
thermal resistance from mounting-base to heatsink
2.2
0.2
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
V
CB
= 20 V; I
E
= 0
V
CB
= 40 V; I
E
= 0
V
CE
= 30 V; R
BE
= 220
V
CE
= 20 V; I
B
= 0
V
EB
= 1.5 V; I
C
= 0
V
CE
= 3 V; I
C
= 2 A
15
2
20
20
20
200
mA
mA
mA
mA
μ
A
100
I
CER
I
CEO
I
EBO
h
FE
collector cut-off current
collector cut-off current
emitter cut-off current
DC current gain
MODE OF OPERATION
f
(GHz)
V
CE
(V)
I
C
(A)
P
L1
(W)
≥
9
typ. 10
G
po
(dB)
≥
10
typ. 11
Z
i
; Z
L
(
)
see Fig 7
Class-A (CW)
1.4 to 1.8
16
2
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