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參數(shù)資料
| 型號： | LX7001IDMT |
| 廠商： | MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP |
| 元件分類： | 電源管理 |
| 英文描述： | 800mA, Low-Voltage, DC-DC Step-Up Converter, Logic-High On - TDFN-10 |
| 中文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8 |
| 封裝： | PLASTIC, SOIC-8 |
| 文件頁數(shù)： | 8/9頁 |
| 文件大?。?/td> | 137K |
| 代理商： | LX7001IDMT |
T
RANSIENT
I
MMUNE
U
NDERVOLTAGE
S
ENSING
C
IRCUIT
LX 7001
PRODUCT DATABOOK 1 9 9 6 / 1 9 9 7
Copyright 1999
Rev. 1.2 6/99
8
P
R O D U C T I O N
D
A T A
S
H E E T
T Y P I C A L A P P L I C A T I O N C I R C U I T S
FIGURE 13.
— LOW VOLTAGE MICROPROCESSOR RESET.
A time delayed reset can be accomplished with the addition of C
.
For systems with extremely fast power supply rise times (< 500ns) it
is recommended that the RC
time constant be greater than 5.0μs.
V
TH(MPU)
is the microprocessor reset input threshold.
Overheating of the logic level power MOSFET due to insufficient gate
voltage can be prevented with the above circuit. When the input signal is
below the 4.3 volt threshold of the LX7001C, its output grounds the gate
of the L
2
MOSFET.
FIGURE 15.
— VOLTAGE MONITOR.
FIGURE 16.
— MOSFET LOW VOLTAGE GATE DRIVE PROTECTION.
V
TH(MPU)
IN
1 -
t
DLY
= R C
DLY
In
1
FIGURE 14.
— SWITCHING THE LOAD OFF WHEN
BATTERY REACHES BELOW 4.3V
POWER
SUPPLY
1.2 V
REF
MICROPROCESSOR
CIRCUIT
RESET
C
DLY
R
V
IN
1.2 V
REF
LOAD
RESET
V
IN
POWER
SUPPLY
1.2 V
REF
RESET
V
IN
1.0k
1.2 V
REF
RESET
V
IN
270
4.3V
V
CC
R
L
SMP60N03-10L
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| LX7001ILP | 功能描述:IC CIRCUIT UNDERVOLT SENSOR TO92 RoHS:是 類別:集成電路 (IC) >> PMIC - 監(jiān)控器 系列:- 標準包裝:1 系列:- 類型:簡單復(fù)位/加電復(fù)位 監(jiān)視電壓數(shù)目:1 輸出:開路漏極或開路集電極 復(fù)位:低有效 復(fù)位超時:標準傳輸延遲為 60 µs 電壓 - 閥值:3V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:SC-74A，SOT-753 供應(yīng)商設(shè)備封裝:SOT-23-5 包裝:Digi-Reel® 其它名稱:LM8364BALMF30DKR |
| LX7001IPK | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Voltage Detector |
| LX7001MY | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:TRANSIENT IMMUNE UNDERVOLTAGE SENSING CIRCUIT |
| LX7001MYT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Voltage Detector |
| LX703 | 制造商:POLYFET 制造商全稱:Polyfet RF Devices 功能描述:SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
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