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參數(shù)資料
| 型號(hào)： | LX5512B |
| 廠商： | Microsemi Corporation |
| 英文描述： | InGaP HBT 2.4 ? 2.5 GHz Power Amplifier |
| 中文描述： | 的InGaP HBT 2.4？ 2.5 GHz功率放大器 |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 178K |
| 代理商： | LX5512B |
LX5512B
P
RODUCTION
D
ATA
S
HEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
Copyright
2004
Rev. 1.0, 2004-06-23
W
M
.
C
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
TM
E L E C T R I C A L C H A R A C T E R I S T I C S
Test conditions: V
C
= 3.3V, V
REF
= 2.95V, I
CQ
= 65mA, T
A
= 25°C
LX5512B
Typ
32
3.0
140
65
1.8
32
±0.25
±0.25
10
10
45
-40
-40
215
-55
1.4
Parameter
Symbol
Test Conditions
Min
2.4
Max
2.5
100
Units
Frequency Range
Power Gain @ P
OUT
= 19dBm
EVM @ P
OUT
= 19dBm
Total Current @ P
OUT
= 19dBm
Quiescent Current
Bias Control Reference Current
Small-Signal Gain
Gain Flatness
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Second Harmonic
Third Harmonic
Total Current @ P
OUT
= 23dBm
2
nd
Side Lobe @ 23dBm
Ramp-On Time
Differential Detector Response
f
64QAM / 54Mbps
For I
CQ
= 65mA
Over 100MHz
0 to +85°C
P
OUT
= 19dBm
P
OUT
= 19dBm
11Mbps CCK
11Mbps CCK
10 ~ 90%
19dBm OFDM
GHz
dB
%
mA
mA
mA
dB
dB
dB
dB
dB
dB
dBc
dBc
mA
dBc
ns
V
Gp
I
C_TOTAL
I
CQ
I
REF
S21
S21
S21
S11
S22
S12
t
ON
Note: All measured data was obtained on a 10mil GETEK evaluation board without heat sink.
E
L
E
C
T
R
I
C
A
L
S
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| LX5512B_05 | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:InGaP HBT 2.4 – 2.5 GHz Power Amplifier |
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| LX5512E | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:InGaP HBT 2.4 – 2.5 GHz Power Amplifier |
| LX5512E_05 | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:InGaP HBT 2.4 – 2.5 GHz Power Amplifier |
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