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參數(shù)資料
| 型號(hào)： | LX5506ELQ |
| 英文描述： | 8-Digit LED driver, 7-Segment, -40°C to +85°C, PDIP 24-pin |
| 中文描述： | 無線局域網(wǎng)功率放大器 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 272K |
| 代理商： | LX5506ELQ |
LX5503E
P
RODUCTION
D
ATA
S
HEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
W
M
.
C
InGaP HBT 4 – 6GHz Power Amplifier
I N T E G R A T E D P R O D U C T S
Copyright
2000
Rev. 1.0, 2003-02-12
E L E C T R I C A L C H A R A C T E R I S T I C S
Unless otherwise specified, the following specifications apply over the following test conditions: Vcc = 3.3V, Icq = 100mA,
T
A
= 25°C
PARAMETER
CONDITION
SYMBOL
Frequency Range
f
Output Power at 1dB Compression
Pout
Power Gain at Pout=18dBm
Gp
EVM at Pout=18dBm
64QAM/54Mbps
Total Current at Pout=18dBm
Ic_total
Quiescent Current
Icq
Bias Control Reference Current
For Icq=100mA
Iref
Small-Signal Gain
S21
Gain Flatness
Over 200MHz
S21
Gain Variation Over Temperature
-40 to +85
o
C
S21
Input Return Loss
S11
Output Return Loss
S22
Reverse Isolation
S12
Second Harmonic
Pout = 18dBm
Third Harmonic
Pout = 18dBm
Ramp-On Time
10~90%
t
ON
MIN.
4.9
25
TYP.
26
21
3
150
100
1.5
19
+/-0.5
+/-1
-15
-7
-35
-40
-45
100
MAX.
5.35
-10
MIN.
5.7
25
TYP.
26
16
3
160
100
1.5
15
+/-0.5
+/-1
-12
-8
-35
-35
-45
100
MAX.
5.85
-10
UNIT
GHz
dBm
dB
%
mA
mA
mA
dB
dB
dB
dB
dB
dB
dBc
dBc
ns
E
L
E
C
T
R
I
C
A
L
S
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LX5506E-LQ | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:InGaP HBT 4 ?6GHz Power Amplifier |
| LX5506LQ | 制造商:Microsemi Corporation 功能描述:RF Amp Chip Single Power Amp 5.85GHz 16-Pin MLPQ EP 制造商:Microsemi Corporation 功能描述:RF AMP CHIP SGL PWR AMP 5.85GHZ 16MLPQ - Bulk |
| LX5506LQ-TR | 制造商:Microsemi Corporation 功能描述:RF Amp Chip Single Power Amp 5.85GHz 16-Pin MLPQ EP T/R |
| LX5506M | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:InGaP HBT 4.5 – 6GHz Power Amplifier |
| LX5506M_09 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:InGaP HBT 4.5 – 6GHz Power Amplifier |
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