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參數(shù)資料
| 型號： | LX5506B |
| 廠商： | Microsemi Corporation |
| 英文描述： | InGaP HBT 4 6GHz Power Amplifier |
| 中文描述： | 4至6GHz的InGaP HBT功率放大器 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 200K |
| 代理商： | LX5506B |
LX5506B
P
RODUCTION
D
ATA
S
HEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
W
M
.
C
InGaP HBT 4 – 6GHz Power Amplifier
Copyright
2003
Rev. 1.0b, 2005-03-02
TM
D E S C R I P T I O N
supply
+26dBm of P1dB and up to 25dB
power gain in the 5.15 - 5.85GHz
frequency range with a simple output
matching capacitor pair.
LX5506B is available in a 16-pin
3mmx3mm micro-lead package (MLP).
The compact footprint, low profile, and
excellent thermal capability of the MLP
package makes the LX5506B an ideal
solution
for
power amplifier requirements for IEEE
802.11a, and HiperLAN2 portable
WLAN applications.
The LX5506B is a power amplifier
optimized for the FCC Unlicensed
National Information Infrastructure
(U-NII) band, HyperLAN2 and Japan
WLAN applications in the 4.9-5.85
GHz frequency range. The PA is
implemented
as
monolithic
microwave
circuit (MMIC) with active bias, on-
chip input matching and output pre-
matching. It also features an on-chip
output power detector to help reduce
BOM cost and PCB board space for
system implementations. The device is
manufactured with an InGaP/GaAs
Heterojunction
Bipolar
(HBT) IC process (MOCVD). It
operates with a single positive voltage
a
three-stage
integrated
Transistor
of
3.3V
(nominal),
with
broadband,
high-gain
IMPORTANT:
For the most current data, consult
MICROSEMI
’s website:
http://www.microsemi.com
P R O D U C T H I G H L I G H T
K E Y F E A T U R E S
Advanced InGaP HBT
Single-Polarity Voltage Supply
EVM ~ 2.5% at Pout=+18dBm,
64QAM/ 54Mbps OFDM (3.3V)
Power Gain ~ 25dB at 5.25GHz
& Pout=+18dBm
Power Gain ~ 21dB at 5.85GHz
& Pout=+18dBm
P1dB ~ +26dBm across 5.15 –
5.85 GHz
Total Current ~ 170mA for
Pout=+18dBm at 5.25GHz
Total Current ~ 200mA for
Pout=+20dBm at 5.25GHz
ACPR ~ -48dBc at 30MHz
Offset at Pout=+18dBm
Integrated Power Detector
Complete On-Chip Input Match
Simple Output Capacitor Match
Small Footprint: 3x3mm2
Low Profile: 0.9mm
A P P L I C A T I O N S /B E N E F I T S
FCC U-N11 Wireless
IEEE 802.11a
HiperLAN2
P A C K A G E O R D E R I N F O
Plastic MLPQ
16-Pin
RoHS Compliant / Pb-free
LX5506BLQ
LQ
Note: Available in Tape & Reel. Append the letters “TR” to the part number.
(i.e. LX5506BLQ-TR)
This device is classified as ESD Level 0 in accordance with MIL-STD-883,
Method 3015 (HBM) testing. Appropriate ESD procedures should be
observed when handling this device.
L
X
5
5
0
6
B
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LX5506BLQ | InGaP HBT 4 6GHz Power Amplifier |
| LX5512BLQ | InGaP HBT 2.4 ? 2.5 GHz Power Amplifier |
| LX5512B | InGaP HBT 2.4 ? 2.5 GHz Power Amplifier |
| LX5512E | InGaP HBT 2.4 - 2.5 GHz Power Amplifier |
| LX5512E-LQ | InGaP HBT 2.4 - 2.5 GHz Power Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LX5506BLQ | 制造商:Microsemi Corporation 功能描述:RF AMP CHIP SGL PWR AMP 5.85GHZ 16MLPQ - Bulk |
| LX5506BLQ-TR | 制造商:Microsemi Corporation 功能描述:RF Amp Chip Single Power Amp 5.85GHz 16-Pin MLPQ EP T/R 制造商:Microsemi Corporation 功能描述:RF AMP CHIP SGL PWR AMP 5.85GHZ 16MLPQ - Tape and Reel |
| LX5506E | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:InGaP HBT 4 ?6GHz Power Amplifier |
| LX5506ELQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Wireless LAN Power Amplifier |
| LX5506E-LQ | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:InGaP HBT 4 ?6GHz Power Amplifier |
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