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參數(shù)資料
| 型號： | LX3052 |
| 英文描述： | InGaAs/InP PIN Photo Detectors |
| 中文描述： | 銦鎵砷/銦PIN光電探測器 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 159K |
| 代理商： | LX3052 |
Microsemi
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
Copyright
2002
Rev. 0.3a
W
M
.
C
LX3050/52 12.5Gbps
Coplanar InGaAs/InP PIN Photo Diode
P
R E L I M I N A R Y
D
A T A
S
H E E T
I N T E G R A T E D P R O D U C T S
C H A R A C T E R I S T I C S
Test conditions (unless otherwise noted): T
A
= 25
o
C, V
R
= 5 Volts
LX3050/52
Typ
32
0.90
0.85
30
0.12
0.135
13
-35
`
MAXIMUM RATINGS
Operating Junction Temperature Range
Storage Temperature Range
Maximum Soldering Temperature
`
ELECTRICAL CHARACTERISTICS
Active Area Diameter
Responsivity (1)
Parameter
Symbol
Test Conditions
Min
-20
-55
Max
+85
+125
+260
Units
T
J
T
STG
R
10 seconds maximum at temperature
o
C
o
C
o
C
μ
m
A/W
V
R
= 5V,
λ
= 1550nm
V
R
= 5V,
λ
= 1310nm
V
R
= 5V
I
R
= 10
μ
A
V
R
= 5V
V
R
= 5V,
λ
= 1550nm @-3dB
1x4 array only @ 10 GHz
1.0
0.95
0.4
45
Dark Current
Breakdown Voltage
Capacitance
Bandwidth (2)
Cross-talk
I
D
BV
R
C
BW
S
21
5
nA
Volts
pF
GHz
dB
0.15
15
Note:
1. Antireflective coating is wavelength @ 1430nm covering 1310 and 1550mn applications.
2. Bandwidth is measured @ -3dB electrical power (photocurrent drops to 71% of DC value) into a 50
load.
D I E M E C H A N I C A L S
Die Dimension, μm
Y
450
450
Pad Dimension, μm
w
75
75
Part Number
Active Area,A,
μm
X
v
75
75
Pad Pitch, p,μm
Die thickness, μm
LX3050
LX3052
32
32
450
1200
125
125
152
152
LX3050
p
w
v
X
Y
12.5um
A
n
contact
(cathode)
p
contact
n
contact
125.0
250.0
325.0
450um
50um
145um
75um
75um
2p
X
Y
LX3052
E
L
E
C
T
R
I
C
A
L
S
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