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參數(shù)資料
| 型號： | LX3052 |
| 英文描述： | InGaAs/InP PIN Photo Detectors |
| 中文描述： | 銦鎵砷/銦PIN光電探測器 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 159K |
| 代理商： | LX3052 |
Microsemi
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
Copyright
2002
Rev. 0.3a
W
M
.
C
LX3050/52 12.5Gbps
Coplanar InGaAs/InP PIN Photo Diode
P
R E L I M I N A R Y
D
A T A
S
H E E T
I N T E G R A T E D P R O D U C T S
D E S C R I P T I O N
Microsemi’s InGaAs/InP PIN Photo
Diode chips are ideal for high bandwidth
1310nm and 1550nm optical networking
applications.
The device series offer high res-
ponsivity, low dark current, and high
bandwidth for high performance and low
sensitivity receiver design.
The LX305X series of coplanar
waveguide photo diodes are currently
offered
in
die
manufacturers the versatility of
custom
assembly
including traditional wirebond or flip
chip assembly
This
device
manufacturers of optical receivers,
transponders, optical transmission
modules and combination PIN photo
diode – transimpedance amplifier.
Microsemi can assemble die on
submounts
and
configurations.
form
allowing
configurations
is
ideal
for
custom
K E Y F E A T U R E S
LX3050 single die
LX3052, 1x4 array die
Coplanar Waveguide , 50ohm
High Responsivity
Low Dark Current
High Bandwidth
Anode/Cathode on Illuminated Side
125μm Pad pitch
Die good for bond wire or flip chip
applications
A P P L I C A T I O N S
1310nm CATV Optical Applications
1550nm DWDM Optical
Applications
SONET/SDH, ATM
10 Gigabit Ethernet, Fibre Channel
1310nm VCSEL receivers
P R O D U C T H I G H L I G H T
Coplanar Design (gnd-signal-gnd) 50 ohm characteristic impedance
125 um standard pad pitch for ease of test
Large 75um x 75um pad size for ease of packaging
Wire bond or Flip Chip Capability
PACK AGE ORDER INFO
T
A
(
°
C)
Die
Die
LX3050
LX3052
0 to 85
L
X
3
0
5
0
/
5
2
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