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參數(shù)資料
| 型號(hào)： | LX3046 |
| 英文描述： | GaAs PIN Photo Detectors |
| 中文描述： | 砷化鎵PIN光電探測器 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 261K |
| 代理商： | LX3046 |
LX3044 / 45 / 46
P
RODUCTION
D
ATA
S
HEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
W
M
.
C
10.3 Gbps Coplanar GaAs PIN Photo Diode
I N T E G R A T E D P R O D U C T S
Copyright
2000
Rev. 1.0, 2002-10-29
E L E C T R I C A L C H A R A C T E R I S T I C S
Unless otherwise specified, the following specifications apply over the following test conditions: T
A
= 25oC, V
R
= 5 Volts
LX304x
Typ
Parameter
Symbol
Test Conditions
Min
Max
Units
`
MAXIMUM RATINGS
Operating Junction Temperature
Range
Storage Temperature Range
`
ELECTRICAL CHARACTERISTICS
Active Area Diameter
Responsivity
Dark Current
Breakdown Voltage
Capacitance
Bandwidth (1)
RF Cross-Talk
T
J
-20
+100
°C
T
STG
10 seconds maximum at temperature
-55
+125
260
°C
°C
Maximum Soldering Temperature
V
R
= 5V,
λ
= 850nm
V
R
= 5V
I
R
= 2
μ
A
V
R
= 5V
V
R
= 5V,
λ
= 850nm @ -3dB
1x4 and 1x12array only @ 10GHz
75
0.6
0.1
47
0.3
8.1
μm
A/W
nA
Volts
pF
GHz
dB
R
I
D
0.55
30
7.8
0.5
0.33
-40
BV
R
C
BW
S
21
Note:
1. Bandwidth is measured at –3dB electrical power (photocurrent drops to 71% of DC value) into a 50
load.
C I R C U I T M O D E L
R
ser
R
diode
C
diode
C
shunt
L
ser
Part #
Rser (
)
Lser (nH)
Cshunt (fF)
Cdiode (fF)
Rdiode (M
)
LX304x
12.3
0.12
118.5
172
187
E
L
E
C
T
R
I
C
A
L
S
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