參數(shù)資料
型號(hào): LV320MT
廠商: Advanced Micro Devices, Inc.
英文描述: 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
中文描述: 32兆位(2米× 16位/ 4米× 8位)的MirrorBit⑩3.0伏特,只有統(tǒng)一閃存部門(mén)與VersatileI /輸出⑩控制
文件頁(yè)數(shù): 42/59頁(yè)
文件大?。?/td> 657K
代理商: LV320MT
40
Am29LV320MH/L
26517B4 January31,2007
D A T A S H E E T
AC CHARACTERISTICS
Read-Only Operations
Notes:
1. Not 100% tested.
2. See Figure 12 and
Table 13
for test specifications.
3. AC specifications listed are tested with VIO = VCC. Contact AMD for information on AC operation VIO
VCC.
Parameter
Description
Test Setup
Speed Options
JEDEC Std.
90R
101,
101R
112R
112
120R
120
Unit
t
AVAV
t
RC
Read Cycle Time (Note 1)
Min
90
100
110
120
ns
t
AVQV
t
ACC
Address to Output Delay
CE#, OE#
= V
IL
Max
90
100
110
120
ns
t
ELQV
t
CE
Chip Enable to Output Delay
OE# = V
IL
Max
90
100
110
120
ns
t
PACC
Page Access Time
Max
25
30
30
40
30
40
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max
25
30
30
40
30
40
ns
t
EHQZ
t
DF
Chip Enable to Output High Z
(Note 1)
Max
16
ns
t
GHQZ
t
DF
Output Enable to Output High Z
(Note 1)
Max
16
ns
t
AXQX
t
OH
Output Hold Time From Addresses,
CE# or OE#, Whichever Occurs First
Min
0
ns
t
OEH
Output Enable
Hold Time
(Note 1)
Read
Min
0
ns
Toggle and
Data# Polling
Min
10
ns
t
OH
t
CE
Outputs
WE#
Addresses
CE#
OE#
HIGH Z
Output Valid
HIGH Z
Addresses Stable
t
RC
t
ACC
t
OEH
t
RH
t
OE
t
RH
0 V
RY/BY#
RESET#
t
DF
Figure 14.
Read Operation Timing
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