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參數(shù)資料
| 型號： | LV320MB |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| 中文描述： | 32兆位（2米× 16位/ 4米× 8位）的MirrorBit⑩3.0伏特，只有統(tǒng)一閃存部門與VersatileI /輸出⑩控制 |
| 文件頁數(shù)： | 54/59頁 |
| 文件大?。?/td> | 657K |
| 代理商： | LV320MB |
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52
Am29LV320MH/L
26517B4 January31,2007
D A T A S H E E T
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 3.0 V V
CC
, Programming specification assume that
all bits are programmed to 00h.
2. Maximum values are measured at V
CC
= 3.0, worst case temperature. Maximum values are valid up to and including 100,000
program/erase cycles.
3. Word/Byte programming specification is based upon a single word/byte programming operation not utilizing the write buffer.
4. For 1-16 words or 1-32 bytes programmed in a single write buffer programming operation.
5. Effective write buffer specification is calculated on a per-word/per-byte basis for a 16-word/32-byte write buffer operation.
6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
7. System-level overhead is the time required to execute the command sequence (s) for the program command. See Tables 12 and
13 for further information on command definitions.
8. The device has a minimum erase and program cycle endurance of 100,000 cycles.
LATCHUP CHARACTERISTICS
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V, one pin at a time.
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.5
3.5
sec
Excludes 00h programming
prior to erasure (Note 6)
Chip Erase Time
32
64
sec
Single Word/Byte Program Time (Note 3)
60
600
μs
Excludes system level
overhead (Note 7)
Accelerated Single Word/Byte Program Time (Note 3)
54
540
μs
Total Write Buffer Program Time (Note 4)
240
1200
μs
Effective Write Buffer Program Time (Note 5)
Per Byte
7.5
38
μs
Per Word
15
75
μs
Total Accelerated Write Buffer Program Time (Note 4)
200
1040
μs
Effective Accelerated Write Buffer Program Time
(Note 5)
Per Byte
6.25
33
μs
Per Word
12.5
65
μs
Chip Program Time
31.5
73
sec
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
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相關代理商/技術參數(shù) |
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|---|---|
| LV320MH | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| LV320ML | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| LV320MT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| LV321 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SINGLE GENERAL PURPOSE, LOW VOLTAGE, RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIER |
| LV321_11 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SINGLE GENERAL PURPOSE, LOW VOLTAGE, RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIER |
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