1997 Feb 18
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LV2327E40R
FEATURES
Interdigitated structure provides
high emitter efficiency
Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
Gold metallization realizes very
stable characteristics and excellent
lifetime
Multicell geometry gives good
balance of dissipated power and
low thermal resistance.
Input and output matching cell
improves the impedances and
facilitates the design of wideband
circuits.
APPLICATIONS
Common emitter class A linear
wideband power amplifiers in the
2.3 to 2.7 GHz band.
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT445B metal ceramic flange
package, with emitter connected to
the flange.
QUICK REFERENCE DATA
Microwave performance for T
case
= 25
°
C in a wideband common-emitter
class A circuit.
PINNING - SOT445B
MODE OF
OPERATION
f
(MHz)
V
CE
(V)
I
C
(A)
P
L1
(W)
≥
4
G
PO
(dB)
≥
7
Z
i
(
)
Z
L
(
)
CW; linear
amplifier
2.3 to 2.7
16
1
11 + j3
7.5
j9
PIN
DESCRIPTION
1
2
3
collector
base
emitter connected to flange
Fig.1 Simplified outline and symbol.
Marking code:
2327E40R.
handbook, halfpage
1
2
MAM315
Top view
3
3
e
c
b
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15