參數(shù)資料
型號： LV033MU
廠商： Advanced Micro Devices, Inc.
英文描述： 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
中文描述： 32兆位（2米× 16位/ 4米× 8位）的MirrorBit⑩3.0伏特，只有統(tǒng)一閃存部門與VersatileI /輸出⑩控制
文件頁數(shù)： 58/59頁
文件大小： 657K
代理商： LV033MU
56
Am29LV320MH/L
26517B4 January31,2007
D A T A S H E E T
REVISION SUMMARY
Revision A (May 30, 2002)
Initial release as Advance Information data sheet.
Revision A+1 (September 3, 2002)
Mirrorbit 32 Mbit Device Family
Changed the 48-pin TSOP to 40-pin TSOP.
Alternate CE# Controlled Erase and Program
Operations
Added t
RH
parameter to table.
Erase and Program Operations
Added t
BUSY
parameter to table.
Figure 16. Program Operation Timings
Added RY/BY# to waveform.
TSOP and BGA PIN Capacitance
Added the FBGA package.
Program Suspend/Program Resume Command
Sequence
Changed 15
μ
s typical to maximum and added 5
μ
s
typical.
Erase Suspend/Erase Resume Commands
Changed typical from 20
μ
s to 5
μ
s and added a maxi-
mum of 20
μ
s.
Product Selector Guide
Added Note 2.
Ordering Information
Added 101R, 112R, and 120R to Valid Combinations
Table. Added Note 1.
Read-Only Operations, Erase and Program
Operations, Alternate CE# Controlled Erase and
Program Operations,
Added 101R, 112R, and 120R to speed options.
Revision A+2 (November 15, 2002)
Customer Lockable: Secured Silicon Sector NOT
Programmed or Protected At the Factory
Added second bullet and figure.
Product Selector Guide and Read-Only Operations
Added 30 ns to the 112R and 120R to Max page ac-
cess time and Max OE# Access time.
Changed the Chip Enable to Output High Z and Out-
put Enable to Output High Z to 16 ns.
Byte/Word Program Command Sequence, Sector
Erase Command Sequence, and Chip Erase
Command Sequence
Noted that the Secured Silicon Sector, autoselect, and
CFI functions are unavailable when a program or
erase operation is in progress.
Common Flash Memory Interface (CFI)
Changed CFI website address.
DC Characteristics
Added I
LR
parameter symbol to table. Removed V
IL
,
V
IH
, V
OL
, and V
OH
and replaced with VIL, V
IH
, V
OL
, V
OH1
and V
OH2.
Clarified note #5. Removed note #6.
Read-Only Operations
Added note #3.
Absolute Maximum Rating
Changed the Ambient Temperature with Power Ap-
plied from –55
°
C to +125
°
C to –65
°
C to +125
°
C.
Revision A+3 (February 14, 2003)
Distinctive Characteristics
Corrected performance characteristics.
AC Characteristics
Added Note.
Input values in the t
WHWH
1 and t
WHWH
2 parameters in
the Erase and Program Options table that were previ-
ously TBD. Also added notes 5 and 6.
Input values in the t
WHWH
1 and t
WHWH
2 parameters in
the Alternate CE# Controlled Erase and Program Op-
tions table that were previously TBD. Also added notes
5 and 6.
Erase and Programming Performance
Input values into table that were previously TBD.
Added note 3 and 4.
Revision B (May 7, 2003)
Distinctive Characteristics
Added typical active read current.
Global
Converted to full datasheet version. Modified Secured
Silicon Sector Flash Memory Region section to in-
clude ESN references.
DC Characteristics
Corrected typical and maximum values for the I
CC1
,
I
CC2
, and
I
CC3
.
Changed Accelerated Effective Write Buffer Program
Operation value.
Erase and Program Operations and Alternate CE#
Controlled Erase and Program Operations
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