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參數(shù)資料
| 型號(hào)： | LTC4441 |
| 廠(chǎng)商： | Linear Technology Corporation |
| 英文描述： | N-Channel MOSFET Gate Driver |
| 中文描述： | N溝道MOSFET柵極驅(qū)動(dòng)器 |
| 文件頁(yè)數(shù)： | 7/12頁(yè) |
| 文件大?。?/td> | 154K |
| 代理商： | LTC4441 |
7
44411f
LTC4441/LTC4441-1
BLOCK DIAGRA
1.09V
IN
1.21V
–
+
UVLO
REG
EN
INB
1.21V
0.45V
SHUTDOWN
FB
V
IN
EN/SHDN
SGND
SHDN
THERMAL
SHUTDOWN
BIAS
LEADING
EDGE DELAY
Q1
P1
M
REG
DRV
CC
OUT
PGND
RBLANK
BLANK
4441 BD
N1
MB
FOR 10-LEAD
LTC4441
ONLY
APPLICATIU
Overview
Power MOSFETs generally account for the majority of
power lost in a converter. It is important to choose not only
the type of MOSFET used, but also its gate drive circuitry.
The LTC4441/LTC4441-1 is designed to drive an N-chan-
nel power MOSFET with little efficiency loss. The LTC4441/
LTC4441-1 can deliver up to 6A of peak current using a
combined NPN Bipolar and MOSFET output stage. This
helps to turn the power MOSFET fully “on” or “off” with a
very brief transition region.
The LTC4441/LTC4441-1 includes a programmable linear
regulator to regulate the gate drive voltage. This regulator
W
U
U
provides the flexibility to use either standard threshold or
logic level MOSFETs.
DRV
CC
Regulator
An internal, P-channel low dropout linear regulator pro-
vides the DRV
CC
supply to power the driver and the pre-
driver logic circuitry as shown in Figure 1. The regulator
output voltage can be programmed between 5V and 8V
with an external resistive divider between DRV
CC
and
SGND and a center tap connected to the FB pin. The
regulator needs an R1 value of around 330k to ensure loop
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PDF描述 |
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| LTC4441ES8-1 | N-Channel MOSFET Gate Driver |
| LTC4441IS8-1 | N-Channel MOSFET Gate Driver |
| LTC4441-1 | RV Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 15V; Output Voltage (Vdc): 24V; Power: 2W; High Isolation 2W Converter; Approved for Medical Applications; EN and UL Safety Certificates; 6kVDC Isolation; Skinny DIP24 Package; Optional Continuous Short Circuit Protected; Fully Encapsulated; Very Low Isolation Capacitance |
| LTC4441EMSE | N-Channel MOSFET Gate Driver |
| LTC4441IMSE | RV Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 15V; Output Voltage (Vdc): 3.3V; Power: 2W; High Isolation 2W Converter; Approved for Medical Applications; EN and UL Safety Certificates; 6kVDC Isolation; Skinny DIP24 Package; Optional Continuous Short Circuit Protected; Fully Encapsulated; Very Low Isolation Capacitance |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LTC4441EMSE | 制造商:Linear Technology 功能描述:MOSFET DRVR 6A 1-OUT Non-Inv 10-Pin MSOP EP |
| LTC4441EMSE#PBF | 功能描述:IC MOSFET DRIVER N-CH 10-MSOP RoHS:是 類(lèi)別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類(lèi)型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類(lèi)型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱(chēng):835-1063 |
| LTC4441EMSE#TR | 制造商:Linear Technology 功能描述:MOSFET DRVR 6A 1-OUT Non-Inv 10-Pin MSOP EP T/R |
| LTC4441EMSE#TRPBF | 功能描述:IC MOSFET DRIVER N-CH 10-MSOP RoHS:是 類(lèi)別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類(lèi)型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類(lèi)型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱(chēng):835-1063 |
| LTC4441ES8-1#PBF | 功能描述:IC MOSFET DRIVER N-CH 8-SOIC RoHS:是 類(lèi)別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類(lèi)型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類(lèi)型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱(chēng):835-1063 |
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