參數資料
型號: LTC4441
廠商: Linear Technology Corporation
英文描述: N-Channel MOSFET Gate Driver
中文描述: N溝道MOSFET柵極驅動器
文件頁數: 7/12頁
文件大?。?/td> 154K
代理商: LTC4441
7
44411f
LTC4441/LTC4441-1
BLOCK DIAGRA
1.09V
IN
1.21V
+
UVLO
REG
EN
INB
1.21V
0.45V
SHUTDOWN
FB
V
IN
EN/SHDN
SGND
SHDN
THERMAL
SHUTDOWN
BIAS
LEADING
EDGE DELAY
Q1
P1
M
REG
DRV
CC
OUT
PGND
RBLANK
BLANK
4441 BD
N1
MB
FOR 10-LEAD
LTC4441
ONLY
APPLICATIU
Overview
Power MOSFETs generally account for the majority of
power lost in a converter. It is important to choose not only
the type of MOSFET used, but also its gate drive circuitry.
The LTC4441/LTC4441-1 is designed to drive an N-chan-
nel power MOSFET with little efficiency loss. The LTC4441/
LTC4441-1 can deliver up to 6A of peak current using a
combined NPN Bipolar and MOSFET output stage. This
helps to turn the power MOSFET fully “on” or “off” with a
very brief transition region.
The LTC4441/LTC4441-1 includes a programmable linear
regulator to regulate the gate drive voltage. This regulator
W
U
U
provides the flexibility to use either standard threshold or
logic level MOSFETs.
DRV
CC
Regulator
An internal, P-channel low dropout linear regulator pro-
vides the DRV
CC
supply to power the driver and the pre-
driver logic circuitry as shown in Figure 1. The regulator
output voltage can be programmed between 5V and 8V
with an external resistive divider between DRV
CC
and
SGND and a center tap connected to the FB pin. The
regulator needs an R1 value of around 330k to ensure loop
相關PDF資料
PDF描述
LTC4441ES8-1 N-Channel MOSFET Gate Driver
LTC4441IS8-1 N-Channel MOSFET Gate Driver
LTC4441-1 RV Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 15V; Output Voltage (Vdc): 24V; Power: 2W; High Isolation 2W Converter; Approved for Medical Applications; EN and UL Safety Certificates; 6kVDC Isolation; Skinny DIP24 Package; Optional Continuous Short Circuit Protected; Fully Encapsulated; Very Low Isolation Capacitance
LTC4441EMSE N-Channel MOSFET Gate Driver
LTC4441IMSE RV Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 15V; Output Voltage (Vdc): 3.3V; Power: 2W; High Isolation 2W Converter; Approved for Medical Applications; EN and UL Safety Certificates; 6kVDC Isolation; Skinny DIP24 Package; Optional Continuous Short Circuit Protected; Fully Encapsulated; Very Low Isolation Capacitance
相關代理商/技術參數
參數描述
LTC4441EMSE 制造商:Linear Technology 功能描述:MOSFET DRVR 6A 1-OUT Non-Inv 10-Pin MSOP EP
LTC4441EMSE#PBF 功能描述:IC MOSFET DRIVER N-CH 10-MSOP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET,電橋驅動器 - 外部開關 系列:- 標準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數:1 輸出數:1 高端電壓 - 最大(自引導啟動):- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應商設備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063
LTC4441EMSE#TR 制造商:Linear Technology 功能描述:MOSFET DRVR 6A 1-OUT Non-Inv 10-Pin MSOP EP T/R
LTC4441EMSE#TRPBF 功能描述:IC MOSFET DRIVER N-CH 10-MSOP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET,電橋驅動器 - 外部開關 系列:- 標準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數:1 輸出數:1 高端電壓 - 最大(自引導啟動):- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應商設備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063
LTC4441ES8-1#PBF 功能描述:IC MOSFET DRIVER N-CH 8-SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET,電橋驅動器 - 外部開關 系列:- 標準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數:1 輸出數:1 高端電壓 - 最大(自引導啟動):- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應商設備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063