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參數(shù)資料
| 型號(hào)： | LTC4441 |
| 廠商： | Linear Technology Corporation |
| 英文描述： | N-Channel MOSFET Gate Driver |
| 中文描述： | N溝道MOSFET柵極驅(qū)動(dòng)器 |
| 文件頁數(shù)： | 10/12頁 |
| 文件大?。?/td> | 154K |
| 代理商： | LTC4441 |
LTC4441/LTC4441-1
44411f
10
signal. MB is designed to turn on and turn off at a
controlled slew rate. This is to prevent the gate switching
noise from coupling into the current sense signal.
The blanking interval can be adjusted using resistor R7
connected to the RBLANK pin. A small resistance value
gives a shorter interval with a default minimum of 75ns.
The value of the resistor R4 and the on-resistance of MB
(typically 11
) form a resistive divider attenuating the
ringing. R4 needs to be large for effective blanking, but not
so large as to cause delay to the sense signal. A resistance
value of 1k to 10k is recommended.
For optimum performance, the LTC4441/LTC4441-1
should be placed as close as possible to the power
MOSFET and current sense resistor, R3.
Power Dissipation
To ensure proper operation and long-term reliability, the
LTC4441/LTC4441-1 must not operate beyond its maxi-
mum temperature rating. The junction temperature can be
calculated by:
I
Q(TOT)
= I
Q
+ f Q
G
P
D
= V
IN
(I
Q
+ f Q
G
)
T
J
= T
A
+ P
D
θ
JA
APPLICATIU
W
U
U
BLANKING TIME
IN
OUT
MB GATE
BLANK/SENSE
+
4441 F04
POWER
MOSFET’s
CURRENT
POWER MOSFET’s
SOURCE TERMINAL
Figure 4. Blanking Waveforms
where:
I
Q
= LTC4441/LTC4441-1 static quiescent current, typi-
cally 250
μ
A
f = Logic input switching frequency
Q
G
= Power MOSFET total gate charge at corresponding
V
GS
voltage equal to DRV
CC
V
IN
= LTC4441/LTC4441-1 input supply voltage
T
J
= Junction temperature
T
A
= Ambient temperature
θ
JA
= Junction-to-ambient thermal resistance. The
10-pin MSOP package has a thermal resistance of
θ
JA
= 38
°
C/W.
The total supply current, I
Q(TOT)
, consists of the LTC4441/
LTC4441-1’s static quiescent current, I
Q
, and the current
required to drive the gate of the power MOSFET, with the
latter usually much higher than the former. The dissipated
power, P
D
, includes the efficiency loss of the DRV
CC
regulator. With a programmed DRV
CC
, a high V
IN
results
in higher efficiency loss.
As an example, consider an application with V
IN
= 12V. The
switching frequency is 300kHz and the maximum ambient
temperature is 70
°
C. The power MOSFET chosen is three
pieces of IRFB31N20D, which has a maximum R
DS(ON)
of
82m
(at room temperature) and a typical total gate
charge of 70nC (the temperature coefficient of the gate
charge is low).
I
Q(TOT)
= 500
μ
A + 210nC 300kHz = 63.5mA
P
IC
= 12V 63.5mA = 0.762W
T
J
= 70
°
C + 38
°
C/W 0.762W = 99
°
C
This demonstrates how significant the gate charge cur-
rent can be when compared to the LTC4441
/LTC4441-1
’s
static quiescent current. To prevent the maximum junc-
tion temperature from being exceeded, the input supply
current must be checked when switching at high V
IN
. A
tradeoff between the operating frequency and the size of
the power MOSFET may be necessary to maintain a
reliable LTC4441
/LTC4441-1
junction temperature. Prior
to lowering the operating frequency, however, be sure to
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