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參數(shù)資料
| 型號： | LTC4440ES6 |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | MOSFETs |
| 英文描述： | High Speed, High Voltage High Side Gate Driver |
| 中文描述： | 2.4 A BUF OR INV BASED MOSFET DRIVER, PDSO6 |
| 封裝： | PLASTIC, MO-193, SOT-23, 6 PIN |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 236K |
| 代理商： | LTC4440ES6 |
3
LTC4440
4440i
The
G
denotes specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25
°
C. V
CC
= V
BOOST
= 12V, V
TS
= GND = 0V, unless otherwise noted.
SYMBOL
PARAMETER
CONDITIONS
Output Gate Driver (TG)
V
OH
High Output Voltage
I
TG
= –10mA, V
OH
= V
BOOST
– V
TG
V
OL
Low Output Voltage
I
TG
= 100mA
I
PU
Peak Pull-Up Current
R
DS
Output Pull-Down Resistance
Switching Timing
t
r
Output Rise Time
10% – 90%, C
L
= 1nF
10% – 90%, C
L
= 10nF
t
f
Output Fall Time
10% – 90%, C
L
= 1nF
10% – 90%, C
L
= 10nF
t
PLH
Output Low-High Propagation Delay
t
PHL
Output High-Low Propagation Delay
ELECTRICAL CHARACTERISTICS
Note 1:
Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2:
The LTC4440 is guaranteed to meet performance specifications
from 0
°
C to 70
°
C. Specifications over the –40
°
C to 85
°
C operating
temperature range are assured by design, characterization and correlation
with statistical process controls.
Note 3:
T
J
is calculated from the ambient temperature T
A
and power
dissipation PD according to the following formula:
T
J
= T
A
+ (PD
θ
JA
°
C/W)
Note 4:
Failure to solder the exposed back side of the MS8E package to
the PC board will result in a thermal resistance much higher than 40
°
C/W.
MIN
TYP
MAX
UNITS
0.7
150
2.4
1.5
V
G
220
mV
G
1.7
A
G
2.2
10
100
7
70
30
28
ns
ns
ns
ns
ns
ns
G
65
65
G
TYPICAL PERFOR U
V
CC
Supply Quiescent Current
vs Voltage
V
CC
SUPPLY VOLTAGE (V)
0
0
Q
μ
A
50
100
150
200
300
5
10
4440 G01
15
250
INP = V
CC
INP = 0V
T
A
= 25
°
C
BOOST – TS SUPPLY VOLTAGE (V)
0
0
Q
μ
A
100
150
200
250
300
350
5
10
4440 G02
400
450
INP = 0V
500
50
15
INP = V
CC
T
A
= 25
°
C
BOOST – TS SUPPLY VOLTAGE (V)
8
O
150
155
160
11
13
4440 G03
145
140
9
10
12
14
15
135
130
I
TG
= 100mA
T
A
= 25
°
C
BOOST – TS
Supply Quiescent
Current vs Voltage
Output Low Voltage (V
OL
)
vs Supply Voltage
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