參數(shù)資料
型號(hào)： LTC4099EUDC#TRPBF
廠商： LINEAR TECHNOLOGY CORP
元件分類： 電源管理
英文描述： 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PQCC20
封裝： 3 X 4 MM, 0.75 MM HEIGHT, LEAD FREE, PLASTIC, QFN-20
文件頁(yè)數(shù)： 20/36頁(yè)
文件大?。?/td> 536K
代理商： LTC4099EUDC#TRPBF
LTC4099
4099fd
R1
C1
D1
V1
V2
D2
M1
M2
4099 F05
WALL
OVSENS
GND
OVGATE
LTC4099
VBUS
Figure 5. Dual Overvoltage Protection
nonlinearcharacteristicofcapacitanceversusvoltage.
Theactualin-circuitcapacitanceofaceramiccapacitor
shouldbemeasuredwithasmallACsignalandDCbias,
asisexpectedin-circuit.Manyvendorsspecifytheca-
pacitanceversusvoltagewitha1VRMSACtestsignaland,
asaresult,overstatethecapacitancethatthecapacitor
willpresentintheapplication.Usingsimilaroperating
conditionsastheapplication,theusermustmeasure
orrequestfromthevendortheactualcapacitanceto
determineiftheselectedcapacitormeetstheminimum
capacitancethattheapplicationrequires.
Overprogramming the Battery Charger
TheUSBhighpowerspecificationallowsforupto2.5W
tobedrawnfromtheUSBport.TheLTC4099’sswitching
regulatorregulatesthevoltageatVOUTtoaleveljust
abovethevoltageatBATwhilelimitingpowertoless
thantheamountprogrammedatCLPROG.Thecharger
shouldbeprogrammed,withthePROGpin,todeliver
themaximumsafechargingcurrentwithoutregardto
theUSBspecifications.Ifthereisinsufficientcurrent
availabletochargethebatteryattheprogrammedrate,
thechargerwillreducechargecurrentuntilthesystem
loadonVOUTissatisfiedandtheVBUScurrentlimitis
satisfied.Programmingthechargerformorecurrent
thanisavailablewillnotcausetheaverageinputcur-
rentlimittobeviolated.Itwillmerelyallowthebattery
chargertomakeuseofallavailablepowertochargethe
batteryasquicklyaspossible,andwithminimalpower
dissipationwithinthecharger.
applicaTions inForMaTion
Overvoltage Protection
It is possible to protect both VBUS and WALL from
overvoltagedamagewithseveraladditionalcomponents
asshowninFigure5.SchottkydiodesD1andD2pass
thelargerofV1andV2toR1andOVSENS.Ifeither
V1orV2exceeds6VplustheSchottkyforwardvoltage,
OVGATEwillbepulledtoGNDandboththeWALLand
USBinputswillbeprotected.Eachinputisprotectedup
tothedrain-sourcebreakdown,BVDSS,ofM1andM2.
Inanovervoltagecondition,theOVSENSpinwillbe
clamped at 6V. The external 6.2k resistor must be
sized appropriately to dissipate the resultant power.
Forexample,a1/8W6.2kresistorcanhaveatmost
√1/8W
× 6.2k = 28V applied across its terminals.
With the 6V at OVSENS, the maximum overvoltage
magnitude that this resistor can withstand is 34V. A
1/4W6.2kresistorraisesthisvalueto45V.OVSENS’s
absolutemaximumcurrentratingof10mAimposesan
upperlimitof68Vprotection.
Table 10. Recommended NMOS FETs for the Overvoltage
Protection Circuit
NMOS FET
BVDSS
RON
PACKAGE
FDN3725
30V
50mΩ
SOT-23
Si2302ADS
20V
70mΩ
SOT-23
NTLJS4114
30V
40mΩ
2mm
×2mmDFN
IRLML2502
20V
35mΩ
SOT-23
ThechargepumpoutputonOVGATEhaslimitedoutput
drivecapability.Caremustbetakentoavoidleakageon
thispinasitmayadverselyaffectoperation.
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