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參數(shù)資料
| 型號： | LTC3816IFE#TRPBF |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | SWITCHING CONTROLLER, PDSO38 |
| 封裝： | LEAD FREE, PLASTIC, TSSOP-38 |
| 文件頁數(shù)： | 25/44頁 |
| 文件大?。?/td> | 753K |
| 代理商： | LTC3816IFE#TRPBF |
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LTC3816
3816f
Figure 18. MOSFET Miller Capacitance
+
–
VDS
VIN
3816 F18
VGS
MILLER EFFECT
QIN
A
B
CMILLER = (QB – QA)/VDS
VGS
VGS(MIL)
V
+
–
applicaTions inForMaTion
POWER MOSFET AND SCHOTTKY DIODE SELECTION
The LTC3816 requires two external N-channel power
MOSFETs: One for the top (main) switch and one (or more)
for the bottom (synchronous) switch.
The peak-to-peak MOSFET gate drive levels are set by the
5.2VINTVCCsupply,requiringtheuseoflogic-levelthresh-
old MOSFETs in most applications. Pay close attention to
the BVDSS specification for the MOSFETs as well; many
logic-level MOSFETs are limited to 30V or less.
Selection criteria for the power MOSFETs includes the
input capacitance, the on-resistance RDS(ON), the input
voltage and the maximum output current. MOSFET input
capacitance is a combination of several components
but can be derived from the typical gate-charge curve
included on most data sheets as shown in Figure 18. The
curve is generated by forcing a constant input current
into the gate of a common source, current source loaded
stage and then plotting the gate voltage versus time. The
initial slope is the effect of the gate-to-source and the
gate-to-drain capacitances. The flat portion of the curve
is the result of the Miller multiplication effect of the drain-
to-gate capacitance as the drain drops the voltage across
the current source load. The upper sloping line is due to
the drain-to-gate accumulation capacitance and the gate-
to-source capacitance.
The Miller charge (the increase in coulombs on the hori-
zontal axis from A to B while the curve is flat) is specified
for a given VDS drain voltage, but can be adjusted for
different VDS voltages by multiplying the ratio of the ap-
plication VDS to the curve specified VDS values. A way to
estimate the CMILLER term is to take the change in gate
charge from points A and B on a manufacturers data sheet
and divide by the stated VDS voltage specified. CMILLER is
the most important selection criteria for determining the
transition loss term in the top MOSFET but is not directly
specified on MOSFET data sheets. CRSS and COSS are
specified sometimes but definitions of these parameters
are not included.
When the controller is operating in continuous mode the
duty cycles for the top and bottom MOSFETs are given
by:
Main Switch Duty Cycle =
Synchronous Swi
V
OUT
IN
ttch Duty Cycle =
V
IN
OUT
IN
–
The power dissipation for the main and synchronous
MOSFETs at maximum output current are given by:
P
V
I
R
V
I
MAIN
OUT
IN
LOAD MAX
DS ON
IN
L
=
(
) +( )
+
( )
(
)
2
1
δ
( )
OOAD MAX
DR
MILLER
INTVCC
GS MIL
GS
R
C
V
(
)
(
)
–
2
1
( )(
)
+
((
)
(
)
–
MIL
OSC
SYNC
IN
OUT
IN
LOAD MAX
f
P
V
I
( )
=
(
)22 1+
( )δRDS ON
( )
where
δ is the temperature dependency of RDS(ON) and
RDR is the effective top driver resistance (approximately
2.6). VGS(MIL) is the MOSFET VGS at the Miller effect
transition. CMILLER is the calculated capacitance using
the gate-charge curve from the MOSFET data sheet as
described above. The term (1 +
δ) is generally given for
a MOSFET in the form of a normalized RDS(ON) versus
temperature curve, but
δ = 0.005/°C can be used as an
approximation for low voltage MOSFETs.
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