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參數(shù)資料
| 型號(hào)： | LTC1157CN8 |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | MOSFETs |
| 英文描述： | 3.3V Dual Micropower High-Side/Low-Side MOSFET Driver |
| 中文描述： | 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP8 |
| 封裝： | PLASTIC, DIP-8 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大小： | 221K |
| 代理商： | LTC1157CN8 |
4
LTC1157
PI FU
Input Pins:
The LTC1157 input pins are active high and
activate the charge pump circuitry when switched ON. The
LTC1157 logic inputs are high impedance CMOS gates
with ESD protection diodes to ground and supply and
therefore should not be forced beyond the power supply
rails.
Gate Drive Pins:
The gate drive pin is either driven to
ground when the switch is turned OFF or driven above the
supply rail when the switch is turned ON. This pin is a
U
relatively high impedance when driven above the rail (the
equivalent of a few hundred k
). Care should be taken to
minimize any loading of this pin by parasitic resistance to
ground or supply.
Supply Pin:
The supply pin of the LTC1157 should never
be forced below ground as this may result in permanent
damage to the device A 300
resistor should be inserted
in series with the ground pin if negative supply voltage
transients are anticipated.
OPERATIOU
The LTC1157 is a dual micropower MOSFET driver de-
signed specifically for operation at 3.3V and 5V and
includes the following functional blocks:
3.3V Logic Compatible Inputs
The LTC1157 inputs have been designed to accommodate
a wide range of 3.3V and 5V logic families. Approximately
50mV of hysteresis is provided to ensure clean switching.
An ultra low standby current voltage regulator provides
continuous bias for the logic-to-CMOS converter. The
logic-to-CMOS converter output enables the rest of the
circuitry. In this way the power consumption is kept to an
absolute minimum in the standby mode.
Gate Charge Pump
Gate drive for the power MOSFET is produced by an
internal charge pump circuit which generates a gate volt-
age substantially higher than the power supply voltage.
The charge pump capacitors are included on-chip and
therefore no external components are required to generate
the gate drive.
Controlled Gate Rise and Fall Times
When the input is switched ON and OFF, the gate is
charged by the internal charge pump and discharged in a
controlled manner. The charge and discharge rates have
been set to minimize RFI and EMI emissions.
BLOCK DIAGRAW
(One Channel)
LOW STANDBY
CURRENT
REGULATOR
HIGH
FREQUENCY
OSCILLATOR
CHARGE
PUMP
LOGIC-TO-CMOS
CONVERTER
VOLTAGE
REGULATOR
INPUT
GND
V
S
GATE
GATE
DISCHARGE
LOGIC
LTC1157 BD
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LTC1157CS8 | 3.3V Dual Micropower High-Side/Low-Side MOSFET Driver |
| LTC1159-3.3 | 50/125 PVC SC-SC 10M DUPLEX ASSEM |
| LTC1159CS-5 | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| LTC1159CG-3.3 | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| LTC1159CG-5 | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LTC1157CN8#PBF | 功能描述:IC MOSFET DRIVER 3.3V DUAL 8-DIP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LTC1157CS8 | 功能描述:IC MOSFET DRIVER 3.3V DUAL 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LTC1157CS8#PBF | 功能描述:IC MOSFET DRIVER 3.3V DUAL 8SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:95 系列:- 配置:高端和低端，獨(dú)立 輸入類型:非反相 延遲時(shí)間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁(yè)面:1381 (CN2011-ZH PDF) |
| LTC1157CS8#TR | 功能描述:IC DRIVER MOSFET 3.3V DUAL 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LTC1157CS8#TRPBF | 功能描述:IC MOSFET DRIVER 3.3V DUAL 8SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
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