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參數(shù)資料
| 型號： | LT4351IMS |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | MOSFETs |
| 英文描述： | MOSFET Diode-OR Controller |
| 中文描述： | 0.67 A BUF OR INV BASED MOSFET DRIVER, PDSO10 |
| 封裝： | PLASTIC, MSOP-10 |
| 文件頁數(shù)： | 14/20頁 |
| 文件大?。?/td> | 270K |
| 代理商： | LT4351IMS |
LT4351
14
sn4351 4351fs
APPLICATIOU
W
U
U
Start-Up Considerations
There is no inherent shutdown in the part. As V
IN
ramps up,
the boost regulator starts at about 0.85V and becomes fully
operational by 1.1V. The undervoltage and overvoltage
comparators become accurate by 1.2V. The gate drive
amplifier keeps GATE low during this period with either a
passive pull-down, a weak active pull-down if OUT is greater
than 0.8V or with the full gate drive sink if V
DD
is above 2.2V.
Once V
IN
is greater than 1.2V and V
DD
is up, the part then
operates normally. The UV and OV pins will control the
enabling of the gate driver and once enabled, the V
IN
to
OUT voltage controls MOSFET turn on.
If V
DD
is still being charged when the gate driver turns on
the MOSFET, the GATE pin tracks with the V
DD
increase
until it reaches either the gate clamp voltage or the
compliance of the gate driver. If V
DD
is present without V
IN
or OUT, the GATE pin actively sinks low.
Power Dissipation
The internal power dissipation of the LT4351 is comprised
of the following four major components: DC power dissi-
pation from V
IN
, DC power dissipation from V
DD
, the
dissipation in the boost switch including the base drive,
and dynamic power dissipation due to current used to
charge and discharge the MOSFETs. The DC components
are:
P
DCVIN
= I
VIN
V
IN
P
DCVDD
= I
VDD
V
DD
Figure 11 shows the internal dissipation of the boost
regulator as a function of V
IN
and inductor value. Figure 11
represents the worst-case condition with the regulator on
all the time, which does not occur in normal practice.
Since the boost regulator supplies current for V
DD
, the
current is the V
DD
supply current (3.5mA) plus the average
current to charge the gate. For a gate charge of 50nC at a
10kHz rate, this adds 0.5mA of current. The power dissi-
pated by the boost regulator to supply the 4mA is shown
in Figure 12, representing a more typical situation.
Finally, the gate driver dissipates power internally when
charging and discharging the gate of the MOSFETs. This
power depends on the input capacitance of the MOSFETs
and the frequency of charge and discharge. The power
associated with this can be approximated by:
P
f
V
Q
V
16
GATE
G
DD
G
IN
=
–
1
where Q
G
is the required gate charge to charge the
MOSFET to the clamp voltage (7.4V) and f
G
is the fre-
quency at which the gate is charged and discharged.
Normally f
G
is low and the resulting power would be very
low. Figure 13 shows P
GATE
for a 50nC gate charge at a
1kHz rate.
Total power dissipation is the sum of all of P
DCVIN
, P
DCVDD
,
P
BOOST
and P
GATE
. Figure 14 is representative of the total
power dissipation of a typical application at steady state.
Figure 11. P
BOOST(MAX)
Figure 12. P
BOOST(TYP)
V
IN
(V)
0
P
B
0.20
0.25
L = 10
μ
H
L = 4.7
μ
H
20
4351 F11
0.15
0.10
5
10
15
0.30
V
IN
(V)
0
P
B
0.015
0.020
L = 4.7
μ
H
20
4351 F12
0.010
0.005
5
10
15
0.025
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| LT4351IMS#PBF | 功能描述:IC CTLR MOSFET DIODE-OR 10MSOP RoHS:是 類別:集成電路 (IC) >> PMIC - O 圈控制器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 應(yīng)用:電池備份，工業(yè)/汽車，大電流開關(guān) FET 型:- 輸出數(shù):5 內(nèi)部開關(guān):是 延遲時間 - 開啟:100ns 延遲時間 - 關(guān)閉:- 電源電壓:3 V ~ 5.5 V 電流 - 電源:250µA 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:16-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:16-SOIC N 包裝:帶卷 (TR) |
| LT4351IMS#TR | 功能描述:IC CTRLR MOSFET DIODE-OR 10MSOP RoHS:否 類別:集成電路 (IC) >> PMIC - O 圈控制器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 應(yīng)用:電池備份，工業(yè)/汽車，大電流開關(guān) FET 型:- 輸出數(shù):5 內(nèi)部開關(guān):是 延遲時間 - 開啟:100ns 延遲時間 - 關(guān)閉:- 電源電壓:3 V ~ 5.5 V 電流 - 電源:250µA 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:16-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:16-SOIC N 包裝:帶卷 (TR) |
| LT4351IMS#TRPBF | 功能描述:IC CTRLR MOSFET DIODE-OR 10MSOP RoHS:是 類別:集成電路 (IC) >> PMIC - O 圈控制器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 應(yīng)用:電池備份，工業(yè)/汽車，大電流開關(guān) FET 型:- 輸出數(shù):5 內(nèi)部開關(guān):是 延遲時間 - 開啟:100ns 延遲時間 - 關(guān)閉:- 電源電壓:3 V ~ 5.5 V 電流 - 電源:250µA 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:16-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:16-SOIC N 包裝:帶卷 (TR) |
| LT4352 | 制造商:LINER 制造商全稱:Linear Technology 功能描述:High Voltage Surge |
| LT4356 | 制造商:LINER 制造商全稱:Linear Technology 功能描述:High Voltage Surge |
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