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參數(shù)資料
| 型號： | LT4351IMS |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | MOSFETs |
| 英文描述： | MOSFET Diode-OR Controller |
| 中文描述： | 0.67 A BUF OR INV BASED MOSFET DRIVER, PDSO10 |
| 封裝： | PLASTIC, MSOP-10 |
| 文件頁數(shù)： | 1/20頁 |
| 文件大小： | 270K |
| 代理商： | LT4351IMS |
LT4351
1
sn4351 4351fs
MOSFET Diode-OR Controller
I
Low Loss Replacement for ORing Diode in Multiple
Sourced Power Supplies
I
External N-Channel MOSFETs for High Current
Capability
I
Internal Boost Regulator Supply for MOSFET
Gate Drive
I
Wide Input Range: 1.2V to 18V
I
Fast Switching MOSFET Gate Control
I
Input Under and Overvoltage Detection
I
STATUS and FAULT Outputs for Monitoring
I
Internal MOSFET Gate Clamp
I
Available in a 10-pin MSOP
, LTC and LT are registered trademarks of Linear Technology Corporation.
I
Paralleled Power Supplies
I
Uninterrupted Supplies
I
High Availability Systems
I
N + 1 Redundant Power Supplies
The LT4351 creates a near-ideal diode using external
single or back-to-back N-channel MOSFETs. This ideal
diode function permits low loss ORing of multiple power
sources. Power sources can easily be ORed together to
increase total system power and reliability with minimal
effect on supply voltage or efficiency. Disparate power
supplies can be efficiently ORed together.
The IC monitors the input supply with respect to the load
and turns on the MOSFET(s) when the input supply is
higher. If the MOSFET’s R
DS(ON)
is sufficiently small, the
LT4351 will regulate the voltage across the MOSFET(s) to
15mV. A STATUS pin indicates the MOSFET on state.
An internal boost regulator generates the MOSFET gate
drive voltage. Low operating voltage allows for OR’ing of
supplies as low as 1.2V.
The LT4351 will disable power passage during undervolt-
age or overvoltage conditions. These voltages are set by
resistive dividers on the UV and OV pins. The undervoltage
threshold has user programmable hysteresis. Overvolt-
age detection is filtered to reduce false triggering.
The LT4351 is available in a 10-pin MSOP.
Dual 5V Redundant Supply
R
LOAD
C
LOAD
GATE
OUT
V
IN
V
DD
SW
LT4351
UV
OV
STATUS
1
μ
F
24.9k
1%
232
1%
1.47k
1%
10
μ
F
10
μ
F
5V
POWER
SUPPLY
1
4.7
μ
H
MBR0530
FAULT
GND
Si4862DY
Si4862DY
GATE
OUT
5V COMMON
V
IN
V
DD
SW
LT4351
UV
OV
STATUS
1
μ
F
24.9k
1%
232
1%
1.47k
1%
4351 TA01
4.7
μ
H
MBR0530
FAULT
GND
POWER
SUPPLY
2
5V
DESCRIPTIOU
FEATURES
APPLICATIU
TYPICAL APPLICATIO
U
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LT4351IMS#PBF | 功能描述:IC CTLR MOSFET DIODE-OR 10MSOP RoHS:是 類別:集成電路 (IC) >> PMIC - O 圈控制器 系列:- 標準包裝:1,000 系列:- 應用:電池備份，工業(yè)/汽車，大電流開關(guān) FET 型:- 輸出數(shù):5 內(nèi)部開關(guān):是 延遲時間 - 開啟:100ns 延遲時間 - 關(guān)閉:- 電源電壓:3 V ~ 5.5 V 電流 - 電源:250µA 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:16-SOIC（0.154"，3.90mm 寬） 供應商設備封裝:16-SOIC N 包裝:帶卷 (TR) |
| LT4351IMS#TR | 功能描述:IC CTRLR MOSFET DIODE-OR 10MSOP RoHS:否 類別:集成電路 (IC) >> PMIC - O 圈控制器 系列:- 標準包裝:1,000 系列:- 應用:電池備份，工業(yè)/汽車，大電流開關(guān) FET 型:- 輸出數(shù):5 內(nèi)部開關(guān):是 延遲時間 - 開啟:100ns 延遲時間 - 關(guān)閉:- 電源電壓:3 V ~ 5.5 V 電流 - 電源:250µA 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:16-SOIC（0.154"，3.90mm 寬） 供應商設備封裝:16-SOIC N 包裝:帶卷 (TR) |
| LT4351IMS#TRPBF | 功能描述:IC CTRLR MOSFET DIODE-OR 10MSOP RoHS:是 類別:集成電路 (IC) >> PMIC - O 圈控制器 系列:- 標準包裝:1,000 系列:- 應用:電池備份，工業(yè)/汽車，大電流開關(guān) FET 型:- 輸出數(shù):5 內(nèi)部開關(guān):是 延遲時間 - 開啟:100ns 延遲時間 - 關(guān)閉:- 電源電壓:3 V ~ 5.5 V 電流 - 電源:250µA 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:16-SOIC（0.154"，3.90mm 寬） 供應商設備封裝:16-SOIC N 包裝:帶卷 (TR) |
| LT4352 | 制造商:LINER 制造商全稱:Linear Technology 功能描述:High Voltage Surge |
| LT4356 | 制造商:LINER 制造商全稱:Linear Technology 功能描述:High Voltage Surge |
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