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參數(shù)資料
| 型號： | LT1P82A |
| 廠商： | Sharp Corporation |
| 英文描述： | 3.3X2.9mm, 1.1mm Thickness, High-luminosity Chip LED Devices with Lens |
| 中文描述： | 3.3X2.9mm，1.1mm的厚度，高亮度發(fā)光二極管芯片的鏡頭裝置 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 108K |
| 代理商： | LT1P82A |
U,T type:Polarity faces in the opposite direction.
I
Absolute Maximum Ratings
(Notice)
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
(Internet)
Data for sharp's optoelectronic/power device is provided for internet.(Address http://www.sharp.co.jp/ecg/)
101
LT1
J
82A series
Chip LED Device
LT1
J
82A series
I
Outline Dimensions
3.3
Colorless transparency
2
1
0
0
0
0
0
0
1
2
2
(4-R0.2)
(0.3)
(0.3)
(0.3)
(0.3)
0.9
1.5
0.9
0
0
0
(R0.2)
(R0.55)
0
+
-
1
+
-
Pin connections
1 Anode
2 Cathode
Unspecified tolerance:
±
0.2
I
Radiation Diagram
0
0
40
20
60
-20
+20
+40
+60
+80
-40
-60
-80
-30
-50
+10
100
-10
+30
+50
+70
+90
-90
-70
80
R
DC
0.40
0.40
Pulse
0.67
0.67
Model No.
Radiation color
Radiation material
Power dissipation
P
(mW)
Forward current
I
F
(mA)
Derating factor
(mA/C)
Peak forward current
I
FM*1
(mA)
Operating temperature
T
opr
(C)
-25 to +85
-25 to +85
-25 to +85
-25 to +85
-25 to +85
-25 to +85
-25 to +85
-25 to +85
Storage temperature
T
stg
(C)
-25 to +100
-25 to +100
-25 to +100
-25 to +100
-25 to +100
-25 to +100
-25 to +100
-25 to +100
Soldering temperature
T
sol*2
(C)
Reverse voltage
V
R
(V)
(T
a
=25C)
LT1U82A
LT1T82A
LT1P82A
LT1D82A
LT1S82A
LT1H82A
LT1E82A
LT1K82A
*1 Duty ratio=1/10, Pulse width=0.1ms
*2 For 3s or less at the temperature of hand soldering. Temperature of reflow soldering is shown on the below page.
I
Electro-optical Characteristics
GaAlAs on GaAIAs
GaAlAs on GaAs
GaP
GaAsP on GaP
GaAsP on GaP
GaAsP on GaP
GaP
GaP
75
66
23
85
85
50
50
50
30
30
10
30
30
20
20
20
50
50
50
50
50
50
50
50
0.13
0.40
0.40
0.27
0.27
0.27
0.67
0.67
0.67
0.67
0.67
0.67
4
5
5
5
5
5
5
5
350
350
350
350
350
350
350
350
Red(Super-luminosity)
Red(High-luminosity)
Red
Red
Sunset orange
Yellow
Yellow-green
Green
TYP
1.85
1.75
MAX
2.5
2.2
Model No.
Lens type
Forward voltage
V
F
(V)
λ
p
(nm)
TYP
660
660
I
V
(mcd)
TYP
54.0
13.1
I
F
(mA)
20
20
I
F
(mA)
20
20
I
F
(mA)
20
20
(MH
Z
)
V
R
(V)
3
4
I
R
(
μ
A)
MAX
100
10
C
t
(pF)
TYP
25
30
λ
(nm)
TYP
20
20
Peak emission wavelength
Luminous intensity
Spectrum radiation bandwidth
Reverse current
Page for
characteristics
diagrams
→
→
Terminal capacitance
(T
a
=25C)
LT1U82A
LT1T82A
LT1P82A
LT1D82A
LT1S82A
LT1H82A
LT1E82A
LT1K82A
1.9
2.0
2.0
1.9
1.95
1.95
2.3
2.8
2.8
2.5
2.5
2.5
695
635
610
585
565
555
5
20
20
10
10
10
1.6
14.4
11.7
5.6
7.8
2.7
20
20
10
10
10
100
35
35
30
30
25
5
20
20
10
10
10
5
10
10
10
10
10
10
4
4
4
4
4
4
55
20
15
35
35
40
1
1
1
1
1
1
1
1
→
→
→
→
→
→
Colorless
transparency
(Unit : mm)
(T
a
=25C)
3.3
2.9mm, 1.1mm Thickness,
High-luminosity Chip LED
Devices with Lens
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LT1S82A | 3.3X2.9mm, 1.1mm Thickness, High-luminosity Chip LED Devices with Lens |
| LT1T82A | 3.3X2.9mm, 1.1mm Thickness, High-luminosity Chip LED Devices with Lens |
| LT1D53A | 3.3X2.9mm, 1.1mm Thickness,Milky Diffusion Chip LED Devices |
| LT1E53A | 3.3X2.9mm, 1.1mm Thickness,Milky Diffusion Chip LED Devices |
| LT1H53A | 3.3X2.9mm, 1.1mm Thickness,Milky Diffusion Chip LED Devices |
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