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99
LT1
J
53A series
Chip LED Device
LT1
J
53A series
I
Outline Dimensions
(0.3)
(0.3)
(0.3)
(0.3)
3.3
0.9
1.5
0.9
Milky diffusion
2
2
1
0
0
0
0
0
0
0
0
0
(4-R0.2)
(R0.2)
0
+
-
1
+
-
1
2
Pin connections
1 Anode
2 Cathode
Unspecified tolerance:
±
0.2
I
Radiation Diagram
0
0
40
20
60
-20
+20
+40
+60
+80
-40
-60
-80
-30
-50
+10
100
-10
+30
+50
+70
+90
-90
-70
80
100
R
DC
0.13
0.40
0.40
0.27
0.27
0.27
Pulse
0.67
0.67
0.67
0.67
0.67
0.67
Model No.
Radiation color
Radiation material
Power dissipation
P
(mW)
Forward current
I
F
(mA)
Derating factor
(mA/C)
Peak forward current
I
FM*1
(mA)
Operating temperature
T
opr
(C)
Storage temperature
T
stg
(C)
Soldering temperature
T
sol*2
(C)
Reverse voltage
V
R
(V)
(T
a
=25C)
LT1P53A
LT1D53A
LT1S53A
LT1H53A
LT1E53A
LT1K53A
*1 Duty ratio=1/10, Pulse width=0.1ms
*2 For 3s or less at the temperature of hand soldering. Temperature of reflow soldering is shown on the below page.
GaP
GaAsP on GaP
GaAsP on GaP
GaAsP on GaP
GaP
GaP
23
85
85
50
50
50
10
30
30
20
20
20
50
50
50
50
50
50
5
5
5
5
5
5
350
350
350
350
350
350
Red
Red
Sunset orange
Yellow
Yellow-green
Green
-25 to +85
-25 to +85
-25 to +85
-25 to +85
-25 to +85
-25 to +85
-25 to +100
-25 to +100
-25 to +100
-25 to +100
-25 to +100
-25 to +100
I
Absolute Maximum Ratings
TYP
1.9
2.0
2.0
1.9
1.85
MAX
2.3
2.8
2.8
2.5
2.5
2.5
Model No.
Lens type
Forward voltage
V
F
(V)
λ
p
(nm)
TYP
695
635
610
585
565
555
I
V
(mcd)
TYP
1.4
9.6
7.8
3.7
4.8
2.2
I
F
(mA)
5
20
20
10
10
10
I
F
(mA)
5
20
20
10
10
10
I
F
(mA)
5
20
20
10
10
10
(MH
Z
)
V
R
(V)
4
4
4
4
4
4
I
R
(
μ
A)
MAX
10
10
10
10
10
10
C
t
(pF)
TYP
55
20
15
35
35
40
λ
(nm)
TYP
100
35
35
30
30
25
Peak emission wavelength
Luminous intensity
Spectrum radiation bandwidth
Reverse current
Page for
characteristics
diagrams
→
→
→
→
→
→
Terminal capacitance
(T
a
=25C)
LT1P53A
LT1D53A
LT1S53A
LT1H53A
LT1E53A
LT1K53A
1.95
1
1
1
1
1
1
Milky
diffusion
I
Electro-optical Characteristics
(Unit : mm)
(T
a
=25C)
3.3
2.9mm, 1.1mm Thickness,
Milky Diffusion Chip LED Devices